FZ800R33KF2C Infineon Technologies, FZ800R33KF2C Datasheet - Page 3
FZ800R33KF2C
Manufacturer Part Number
FZ800R33KF2C
Description
IGBT Modules 3300V 800A SINGLE
Manufacturer
Infineon Technologies
Datasheet
1.FZ800R33KF2C.pdf
(8 pages)
Specifications of FZ800R33KF2C
Configuration
Single
Channel Type
N
Gate To Emitter Voltage (max)
±20V
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
125C
Operating Temperature Classification
Automotive
Collector- Emitter Voltage Vceo Max
3300 V
Collector-emitter Saturation Voltage
3.4 V
Continuous Collector Current At 25 C
1300 A
Gate-emitter Leakage Current
400 nA
Power Dissipation
9.6 KW
Maximum Operating Temperature
+ 125 C
Maximum Gate Emitter Voltage
+/- 20 V
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Package / Case
IHM
Ic (max)
800.0 A
Vce(sat) (typ)
3.4 V
Technology
IGBT2 Standard
Housing
IHV 130 mm
Lead Free Status / RoHS Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FZ800R33KF2C
Manufacturer:
INFINEON
Quantity:
120
Part Number:
FZ800R33KF2C
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Technische Information / technical information
IGBT-Module
IGBT-modules
Modul / module
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine
Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehörigen technischen Erläuterungen.
This technical information specifies semiconductor devices but guarantees no characteristics.
It is valid with the appropriate technical explanations.
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