FF300R12KE3 Infineon Technologies, FF300R12KE3 Datasheet - Page 7

• Manufacturer Part Number: FF300R12KE3
• Description: IGBT Transistors 1200V 300A DUAL
• Manufacturer: Infineon Technologies

Specifications of FF300R12KE3

• Configuration: Dual
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 1.7 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 480 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 1450 W
• Maximum Operating Temperature: + 125 C
• Package / Case: 62MM
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Module Configuration: Dual
• Dc Collector Current: 440A
• Collector Emitter Voltage Vces: 2.15V
• Power Dissipation Pd: 1.45kW
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +125°C
• Rohs Compliant: Yes
• Ic (max): 300.0 A
• Vce(sat) (typ): 1.7 V
• Technology: IGBT3
• Housing: 62 mm
• Lead Free Status / RoHS Status: Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Compliant

Technische Information / technical information
FF300R12KE3
IGBT-Module
IGBT-modules
Schaltplan / circuit diagram
Gehäuseabmessungen / package outlines
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