FT150R12KE3_B5 Infineon Technologies, FT150R12KE3_B5 Datasheet - Page 2
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FT150R12KE3_B5
Manufacturer Part Number
FT150R12KE3_B5
Description
IGBT Modules N-CH 1.2KV 200A
Manufacturer
Infineon Technologies
Datasheet
1.FT150R12KE3_B5.pdf
(8 pages)
Specifications of FT150R12KE3_B5
Channel Type
N
Collector-emitter Voltage
1.2kV
Collector Current (dc) (max)
200A
Gate To Emitter Voltage (max)
±20V
Pin Count
18
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
125C
Operating Temperature Classification
Automotive
Configuration
Triple
Collector- Emitter Voltage Vceo Max
1200 V
Continuous Collector Current At 25 C
200 A
Maximum Operating Temperature
+ 125 C
Maximum Gate Emitter Voltage
+/- 20 V
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Package / Case
Econo 2
Lead Free Status / RoHS Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FT150R12KE3_B5FT150R12KE3-B5
Manufacturer:
INFINEON
Quantity:
100
Company:
Part Number:
FT150R12KE3_B5
Manufacturer:
HITTITE
Quantity:
1 001
Technische Information / technical information
IGBT-Module
IGBT-modules
Diode-Wechselrichter / diode-inverter
Höchstzulässige Werte / maximum rated values
Charakteristische Werte / characteristic values
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Vorläufige Daten
preliminary data
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