BSM10GP120 Infineon Technologies, BSM10GP120 Datasheet - Page 3

• Manufacturer Part Number: BSM10GP120
• Description: IGBT Modules 1200V 10A PIM
• Manufacturer: Infineon Technologies

Specifications of BSM10GP120

• Configuration: Hex
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Pin Count: 24
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.4 V
• Continuous Collector Current At 25 C: 20 A
• Gate-emitter Leakage Current: 300 nA
• Power Dissipation: 100 W
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: EconoPIM2
• Lead Free Status / RoHS Status: Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Compliant

Modulinduktivität
stray inductance module
Modul Leitungswiderstand, Anschlüsse-Chip
lead resistance, terminals-chip
Diode Wechselrichter/ Diode Inverter
Durchlaßspannung
forward voltage
Rückstromspitze
peak reverse recovery current
Sperrverzögerungsladung
recovered charge
Abschaltenergie pro Puls
reverse recovery energy
Transistor Brems-Chopper/ Transistor Brake-Chopper
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
Gate-Schwellenspannung
gate threshold voltage
Eingangskapazität
input capacitance
Kollektor-Emitter Reststrom
collector-emitter cut-off current
Gate-Emitter Reststrom
gate-emitter leakage current
Diode Brems-Chopper/ Diode Brake-Chopper
Durchlaßspannung
forward voltage
NTC-Widerstand/ NTC-Thermistor
Nennwiderstand
rated resistance
Abweichung von R
deviation of R
Verlustleistung
power dissipation
B-Wert
B-value
IGBT-Module
IGBT-Modules
Elektrische Eigenschaften / Electrical properties
Charakteristische Werte / Characteristic values
Technische Information / Technical Information
100
100
T
V
V
I
V
V
I
V
V
I
V
V
V
V
V
f = 1MHz, T
V
V
V
V
T
T
T
T
T
R
BSM10GP120
F
F
F
C
vj
vj
C
C
C
GE
GE
=I
GE
GE
=I
GE
GE
=I
GE
GE
GE
GE
CE
CE
GE
GE
CE
2
= 25°C
= 25°C,
= 125°C,
= 25°C
= 100°C, R
= 25°C
= R
Nenn
Nenn
Nenn
= 0V, T
= 0V, T
= -10V, T
= -10V, T
= -10V, T
= -10V, T
= -10V, T
= -10V, T
= 15V, T
= 15V, T
= V
= 25 V, V
= 0V, T
= 0V, T
= 0V, V
1
,
,
,
GE
exp [B(1/T
,
GE
vj
vj
vj
vj
vj
T
= 25°C
GE
vj
vj
vj
vj
vj
vj
vj
vj
100
= 20V, T
= 25°C,
= 125°C,
= 25°C, V
= 125°C, V
vj
= 25°C,
= 125°C,
= 25°C, V
= 125°C, V
= 25°C, V
= 125°C, V
= 25°C, V
= 125°C, V
3(11)
= 0 V
= 25°C,
= 493
2
- 1/T
- di
- di
- di
vj
1
= 25°C
)]
F
F
F
I
I
/dt =
/dt =
/dt =
CE
CE
I
I
F
F
I
R
R
R
R
R
R
I
I
C
C
C
F
F
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
10 A
10 A
400A/µs
600 V
600 V
400A/µs
600 V
600 V
400A/µs
600 V
600 V
10,0 A
10,0 A
0,35mA
1200 V
1200 V
10,0 A
10,0 A
R
V
V
B
L
CC’+EE’
E
GE(TO)
C
I
I
R
P
I
CE sat
V
CES
GES
V
R/R
Q
25/50
RM
RQ
ies
25
25
CE
F
F
r
min.
min.
min.
min.
min.
4,5
-5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
3375
typ.
typ.
typ.
typ.
typ.
0,84
0,54
2,75
2,2
2,1
1,5
0,3
2,4
5,5
0,6
0,5
0,8
2,2
2,1
11
11
13
5
-
-
max.
max.
max.
max.
max.
2,55
2,85
2,55
100
500
300
6,5
20
5
-
-
-
-
-
-
-
-
-
-
-
-
-
DB-PIM-9.xls
mWs
mWs
µAs
µAs
mW
m
mA
nH
k
nF
µA
nA
%
V
V
A
A
V
V
V
V
V
K