FZ1600R17KF6C_B2 Infineon Technologies, FZ1600R17KF6C_B2 Datasheet - Page 7

• Manufacturer Part Number: FZ1600R17KF6C_B2
• Description: IGBT Modules N-CH 1.7KV 2.6KA
• Manufacturer: Infineon Technologies

Specifications of FZ1600R17KF6C_B2

• Channel Type: N
• Collector-emitter Voltage: 1.7kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Configuration: Dual Common Emitter Common Gate
• Collector- Emitter Voltage Vceo Max: 1700 V
• Collector-emitter Saturation Voltage: 2.6 V
• Continuous Collector Current At 25 C: 2600 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 12.5 KW
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: IHM
• Ic (max): 1,600.0 A
• Vce(sat) (typ): 2.7 V
• Technology: IGBT2 Low Loss
• Housing: IHM 130 mm
• Lead Free Status / RoHS Status: Not Compliant

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
0,0001
0,001
0,01
0,1
0,001
3500
3000
2500
2000
1500
1000
500
0
Transienter Wärmewiderstand
Transient thermal impedance
Sicherer Arbeitsbereich (RBSOA)
Reverse bias safe operation area (RBSOA)
r
r
0
i
i
[K/kW]
[K/kW]
i
i
[sec]
[sec]
i
200
: IGBT
: IGBT
: Diode
: Diode
0,01
FZ1600R17KF6C B2
400
600
0,0287
0,027
0,94
7,85
1
7 (8)
0,1
800
V
0,0705
0,052
1000
CE
4,72
3,53
2
t [sec]
[V]
Z
thJC
1200
IC,Modul
IC,Chip
1
= f (t)
R
g
1,425
0,153
= 0,9 Ohm, T
0,09
1,12
3
1400
Zth:Diode
Zth:IGBT
vj
= 125°C
1600
10
0,838
0,988
2,92
4,52
4
1800
FZ1600R17KF6C B2.xls
100