BSM100GB120DLCK Infineon Technologies, BSM100GB120DLCK Datasheet - Page 7

• Manufacturer Part Number: BSM100GB120DLCK
• Description: IGBT Modules 1200V 100A DUAL
• Manufacturer: Infineon Technologies

Specifications of BSM100GB120DLCK

• Configuration: Dual
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.1 V
• Continuous Collector Current At 25 C: 205 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 835 W
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: 34MM
• Ic (max): 100.0 A
• Vce(sat) (typ): 2.1 V
• Technology: IGBT2 Low Loss
• Housing: 34 mm
• Lead Free Status / RoHS Status: Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Compliant

Technische Information / technical information
BSM100GB120DLCK
IGBT-Module
IGBT-modules
Schaltplan / circuit diagram
Gehäuseabmessungen / package outlines
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