BSM400GA170DL Infineon Technologies, BSM400GA170DL Datasheet - Page 2

• Manufacturer Part Number: BSM400GA170DL
• Description: IGBT Modules N-CH 1.7KV 800A
• Manufacturer: Infineon Technologies

Specifications of BSM400GA170DL

• Configuration: Single Dual Emitter
• Channel Type: N
• Collector-emitter Voltage: 1.7kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 1700 V
• Continuous Collector Current At 25 C: 800 A
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Lead Free Status / RoHS Status: Compliant

Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Charakteristische Werte / Characteristic values: Transistor
Charakteristische Werte / Characteristic values: Diode
Thermische Eigenschaften / Thermal properties
Mechanische Eigenschaften / Mechanical properties
BSM 400 GA 170 DL
collector-emitter voltage
DC-collector current
repetitive peak collector current
total power dissipation
gate-emitter peak voltage
DC forward current
repetitive peak forw. current
I
insulation test voltage
collector-emitter saturation voltage
gate threshold voltage
input capacitance
collector-emitter cut-off current
gate-emitter leakage current
turn-on delay time (inductive load)
rise time (inductive load)
turn off delay time (inductive load)
fall time (inductive load)
turn-on energy loss per pulse
turn-off energy loss per pulse
SC Data
stray inductance module
forward voltage
peak reverse recovery current
recovered charge
reverse recovery energy
thermal resistance, junction to case Transistor / transistor, DC
thermal resistance, case to heatsink pro Module / per Module
max. junction temperature
operating temperature
storage temperature
internal insulation
creepage distance
clearance
comperative tracking index
mounting torque
terminal connection torque
weight
2
t - value, Diode
T
T
t
T
t
V
RMS, f = 50 Hz, t = 1 min.
I
I
I
f = 1MHz,T
V
V
V
I
V
V
I
V
V
I
V
V
I
V
V
I
R
I
R
t
T
I
I
I
V
V
I
V
V
I
V
V
Diode / diode, DC
d
terminals M4
terminals M6
p
p
C
C
C
C
C
C
C
C
C
P
V
F
F
F
F
F
Paste
C
C
C
R
CE
CE
CE
GE
GE
GE
GE
GE
GE
GE
GE
Vj
R
R
R
R
R
R
G
G
= 1 ms, T
= 1 ms
CEmax
= 400A, V
= 400A, V
= 400A, - di
= 400A, - di
= 400A, - di
= 400A, V
= 400A, V
= 18mA, V
= 400A, V
= 400A, V
= 400A, V
= 400A, V
= 400A, V
= 400A, V
= 80°C
= 25°C
= 25°C, Transistor
= 0V, t
= 3,9 , T
= 3,9 , T
= 900V, V
= 900V, V
= 900V, V
= 900V, V
= 900V, V
= 900V, V
125°C, V
= 1700V, V
= 1700V, V
= 0V, V
10µsec, V
= ±15V, R
= ±15V, R
= ±15V, R
= ±15V, R
= ±15V, R
= ±15V, R
= ±15V, R
= ±15V, R
=V
50µm / d
p
CES
vj
= 10ms, T
GE
C
GE
GE
GE
GE
CE
CE
CE
CE
CE
CE
CE
= 25°C,V
vj
vj
CC
GE
GE
GE
GE
GE
GE
= 80°C
-L
F
F
F
GE
= 20V, T
= 125°C, L
= 125°C, L
/dt = 6000A/µsec
/dt = 6000A/µsec
/dt = 6000A/µsec
= 0V, T
= 0V, T
= 15V, T
= 15V, T
= 900V
G
G
= 900V
G
G
= 900V
G
G
= 900V
G
G
= 900V, V
= 900V, V
GE
GE
=1000V
sCE
= V
= -10V, T
= -10V, T
= -10V, T
= -10V, T
= -10V, T
= -10V, T
grease
= 3,9 , T
= 3,9 , T
= 3,9 , T
= 3,9 , T
= 3,9 , T
= 3,9 , T
= 3,9 , T
= 3,9 , T
= 0V, T
= 0V, T
15V, R
GE
x dI/dt
, T
Vj
CE
vj
vj
vj
= 125°C
50µm
vj
vj
vj
= 25°C
= 125°C
= 25V, V
= 25°C
GE
GE
= 25°C
= 125°C
S
S
vj
vj
vj
vj
vj
vj
= 25°C
vj
vj
G
vj
vj
vj
vj
vj
vj
vj
vj
= 60nH
= 60nH
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 15V
= 15V
= 3,9
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
GE
= 0V
V
I
I
I
P
V
I
I
I
V
v
v
C
I
I
t
t
t
t
E
E
I
L
V
I
Q
E
R
R
T
T
T
max.
max.
max.
G
C,nom.
C
CRM
F
FRM
2
CES
GES
d,on
r
d,off
f
SC
RM
CE sat
GE(th)
t
sCE
CES
tot
GES
ISOL
on
off
F
rec
vj
op
stg
ies
thJC
thCK
r
min.
-40
-40
4,5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
vorläufige Daten
preliminary data
1600
0,03
0,03
170
135
260
400
100
typ.
2,7
3,2
5,5
0,1
0,1
0,1
0,1
0,1
0,8
0,9
2,2
27
12
15
45
21
43
2
-
-
-
-
-
-
-
72000 A
0,075 K/W
0,012 K/W
Al
1700 V
3120 W
max.
± 20 V
0,04 K/W
400 A
800 A
800 A
400 A
800 A
200 nA
150 °C
125 °C
125 °C
420 g
2
3,4 kV
3,3 V
6,5 V
2,6 V
O
20 mm
11 mm
1 mA
5 Nm
2 Nm
5 Nm
3
- V
- nF
- mA
- µs
- µs
- µs
- µs
- µs
- µs
- µs
- µs
- mWs
- mWs
- A
- nH
- V
- A
- A
- µAs
- µAs
- mWs
- mWs
2
s