BSM400GA120DN2S Infineon Technologies, BSM400GA120DN2S Datasheet - Page 2

• Manufacturer Part Number: BSM400GA120DN2S
• Description: IGBT Transistors 1200V 400A SINGLE
• Manufacturer: Infineon Technologies

Specifications of BSM400GA120DN2S

• Configuration: Single
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Pin Count: 4
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 1200 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 400 A
• Power Dissipation: 2700 W
• Maximum Operating Temperature: + 150 C
• Package / Case: IS6a ( 62 mm )-4
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Ic (max): 400.0 A
• Vce(sat) (typ): 2.5 V
• Technology: IGBT2 Standard
• Housing: 62 mm
• Lead Free Status / RoHS Status: Compliant

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
Anhang C-Serie
Appendix C-series
Gehäusemaße C-Serie
Package outline C-series
Gehäuse spezifische Werte
Housing specific values
stray inductance module
Modulinduktivität
BSM400GA120DN2
Appendix C-series
L
sCE
typ.
20
nH
Appendix_C-Serie_BSM400GA120DN2.xls
2001-09-20