FD400R33KF2C Infineon Technologies, FD400R33KF2C Datasheet - Page 10

• Manufacturer Part Number: FD400R33KF2C
• Description: IGBT Transistors 3300V 400A CHOPPER
• Manufacturer: Infineon Technologies

Specifications of FD400R33KF2C

• Configuration: Single
• Channel Type: N
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 330 V
• Collector-emitter Saturation Voltage: 3.4 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 400 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 4.8 KW
• Maximum Operating Temperature: + 125 C
• Package / Case: IHM 130X140-7
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Ic (max): 400.0 A
• Vce(sat) (typ): 3.4 V
• Technology: IGBT2 Standard
• Housing: IHV 130 mm
• Lead Free Status / RoHS Status: Compliant

Technische Information / technical information
IGBT-Module
IGBT-modules
Schaltplan / circuit diagram
Gehäuseabmessungen / package outlines
FD400R33KF2C
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10
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Vorläufige Daten
preliminary data