BSM50GB120DLC Infineon Technologies, BSM50GB120DLC Datasheet - Page 5

• Manufacturer Part Number: BSM50GB120DLC
• Description: IGBT MODULE, DUAL, 1200V
• Manufacturer: Infineon Technologies

Specifications of BSM50GB120DLC

• Channel Type: N
• Configuration: Dual
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Module Configuration: Dual
• Dc Collector Current: 115A
• Collector Emitter Voltage Vces: 2.6V
• Power Dissipation Max: 460W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +125°C
• Power Dissipation Pd: 460W
• Rohs Compliant: Yes
• Ic (max): 50.0 A
• Vce(sat) (typ): 2.1 V
• Technology: IGBT2 Low Loss
• Housing: 34 mm
• Lead Free Status / RoHS Status: Compliant

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
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0
0
0,0
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Durchlaßkennlinie der Inversdiode (typisch)
Forward characteristic of inverse diode (typical)
Übertragungscharakteristik (typisch)
Transfer characteristic (typical)
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0,5
BSM50GB120DLC
Tvj = 25°C
Tvj = 125°C
7
Tvj = 25°C
Tvj = 125°C
1,0
8
V
V
GE
F
1,5
[V]
5(8)
[V]
9
I
2,0
C
V
CE
= f (V
= 20V
10
GE
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2,5
11
I
F
= f (V
F
)
3,0
12
DB_BSM50GB120DLC_3.0
2003-01-10