BSM200GB170DLC Infineon Technologies, BSM200GB170DLC Datasheet - Page 4

• Manufacturer Part Number: BSM200GB170DLC
• Description: IGBT Modules 1700V 200A DUAL
• Manufacturer: Infineon Technologies

Specifications of BSM200GB170DLC

• Configuration: Dual
• Channel Type: N
• Collector-emitter Voltage: 1.7kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 1700 V
• Collector-emitter Saturation Voltage: 2.6 V
• Continuous Collector Current At 25 C: 400 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 1660 W
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: 62MM
• Ic (max): 200.0 A
• Vce(sat) (typ): 2.6 V
• Technology: IGBT2 Low Loss
• Housing: 62 mm
• Lead Free Status / RoHS Status: Compliant

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
400
350
300
250
200
150
100
400
350
300
250
200
150
100
50
50
0
0
0,0
0,0
Ausgangskennlinienfeld (typisch)
Output characteristic (typical)
Ausgangskennlinie (typisch)
Output characteristic (typical)
0,5
0,5
1,0
1,0
BSM 200 GB 170 DLC
1,5
1,5
2,0
2,0
4(8)
V
V
CE
CE
VGE = 19V
VGE = 15V
VGE = 13V
VGE = 11V
VGE = 9V
2,5
2,5
Tvj = 25°C
Tvj = 125°C
[V]
[V]
3,0
3,0
V
I
GE
C
= f (V
= 15V
I
C
T
3,5
3,5
vj
= f (V
= 125°C
CE
)
CE
4,0
4,0
)
4,5
4,5
BSM200GB170DLC_3.xls
5,0
5,0