FZ800R33KL2C Infineon Technologies, FZ800R33KL2C Datasheet - Page 4

• Manufacturer Part Number: FZ800R33KL2C
• Description: IGBT Modules N-CH 3.3KV 1.5KA
• Manufacturer: Infineon Technologies

Specifications of FZ800R33KL2C

• Configuration: Dual
• Channel Type: N
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 3300 V
• Continuous Collector Current At 25 C: 1500 A
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: IHV130
• Ic (max): 800.0 A
• Vce(sat) (typ): 3.0 V
• Technology: IGBT2 Low Loss
• Housing: IHV 130 mm
• Lead Free Status / RoHS Status: Compliant

Technische Information / technical information
IGBT-Module
IGBT-modules
:
:
6. * V-./W
6. * V-./W
-D/ * 5+ -
-D/ * 5+ -
c
c
6. * V-D/W
6. * V-D/W
-./ *
-./ *
:
:
6. * V-./W
6. * V-./W
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-D/ * 5+ -
c
c
6. * V-D/W
6. * V-D/W
-./ *
-./ *
1600
1440
1280
1120
1600
1400
1200
1000
&
&
&
&
960
800
640
480
320
160
800
600
400
200
0
0
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5,5 6,0 6,5 7,0
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6?a' C
6?a' C
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-./ u-v
-D/ u-v
9
FZ800R33KL2C
" V
" V
" V
" V
V
V
V
V
V
V
V
V
10
W
W
W
W
" V
" V
" V
" V
11
W
W
W
W
W
W
W
W
"
12
W
W
W
W
13
4
:
:
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6. * V-./W
6. * V-./W
6. * V-./W
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'() * 5 +,
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%
%
%
%
#87 * V6.W4 #8ZZ * V6.W
#87 * V6.W4 #8ZZ * V6.W
#87 * V6.W4 #8ZZ * V6.W
#87 * V6.W4 #8ZZ * V6.W
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-D/ * X5+ -4 ND87 * 4 P4 ND8ZZ * !43 P4 -./ * 53
-D/ * X5+ -4 ND87 * 4 P4 ND8ZZ * !43 P4 -./ * 53
-D/ * X5+ -4 ND87 * 4 P4 ND8ZZ * !43 P4 -./ * 53
@
@
@
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D/ *
D/ *
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1600
1440
1280
1120
6000
5000
4000
3000
2000
1000
&
&
&
&
960
800
640
480
320
160
0
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200 400 600 800 1000 1200 1400 1600
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6?a' C
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6?a'
6?a'
6?a'
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-
-./ u-v
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" V
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V
V
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Vorläufige Daten
preliminary data
V
V
V
V
W
W
W
W
W
W
W
W
" V
" V
" V
" V
W
W
W
W
W
W
W
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-4
-4
-4