FD600R17KE3_B2 Infineon Technologies, FD600R17KE3_B2 Datasheet - Page 2

• Manufacturer Part Number: FD600R17KE3_B2
• Description: IGBT Modules N-CH 1.7KV 950A
• Manufacturer: Infineon Technologies

Specifications of FD600R17KE3_B2

• Channel Type: N
• Collector-emitter Voltage: 1.7kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Configuration: Single Dual Collector Dual Emitter
• Collector- Emitter Voltage Vceo Max: 1700 V
• Continuous Collector Current At 25 C: 950 A
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: IHM130
• Ic (max): 600.0 A
• Vce(sat) (typ): 2.0 V
• Technology: IGBT3
• Housing: IHM 130 mm
• Lead Free Status / RoHS Status: Compliant

Technische Information / technical information
IGBT-Module
IGBT-modules
Diode-Wechselrichter / diode-inverter
Höchstzulässige Werte / maximum rated values
Charakteristische Werte / characteristic values
=
4
4
=
A
6h
4
O
'
<
6
c
B
&
&
(
(
B
(
&
I & B
(
'
(
'
(
(
I & B
(
&
(
B
5 `
5
(
=
(
&
(
(
(
FD600R17KE3_B2
)*+ , -.
/? ,
6g , :
6g , :
6g , :
/? , ;
/E1 , 3- /
6g , :
/? , ;
/E1 , 3- /
6g , :
/? , ;
/E1 , 3- /
d>KJCS , 3
> , 3 &
4
4
/5 > , 3 & 5 )*+ , 3 -.
<5 /E1 ,
<5 /E1 ,
<5
<5
<5
/
/
/
G
#
GV&_$W G
gG
gG
gG
, D"- <GN
, D"- <GN
, D"- <GN
/
/
deUSKJS , 3
2
! "
GV&_$W
)*+ , -.
)*+ , 3 -.
)*+ , -.
)*+ , 3 -.
)*+ , -.
)*+ , 3 -.
)*+ , -.
)*+ , 3 -.
OCL0f
/??@
OCLb0
6g?@
%USi
6?@
/g
MU
6h
6g
Vorläufige Daten
preliminary data
& #
3"
3
35:
35"
:
3 -
"3
""-
3!
D
3
:5
3
#
& H#
--5
5
$G
$G
N
N
&[
&[
<h
/
<
<
/
/
<
<