FF400R17KF6C_B2 Infineon Technologies, FF400R17KF6C_B2 Datasheet - Page 4

• Manufacturer Part Number: FF400R17KF6C_B2
• Description: IGBT Modules N-CH 1.7KV 650A
• Manufacturer: Infineon Technologies

Specifications of FF400R17KF6C_B2

• Configuration: Dual
• Channel Type: N
• Collector-emitter Voltage: 1.7kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 1700 V
• Collector-emitter Saturation Voltage: 2.6 V
• Continuous Collector Current At 25 C: 650 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 3.3 KW
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: IHM
• Ic (max): 400.0 A
• Vce(sat) (typ): 2.7 V
• Technology: IGBT2 Low Loss
• Housing: IHM 130 mm
• Lead Free Status / RoHS Status: Not Compliant

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
900
800
700
600
500
400
300
200
100
900
800
700
600
500
400
300
200
100
0
0
0,0
0,0
Ausgangskennlinienfeld (typisch)
Output characteristic (typical)
Ausgangskennlinie (typisch)
Output characteristic (typical)
0,5
0,5
1,0
1,0
Tvj = 25°C
Tvj = 125°C
vGE = 20V
vGE= 15V
vGE = 12V
vGE = 10V
vGE = 9V
vGE = 8V
1,5
1,5
FF 400 R 17 KF6C B2
2,0
2,0
4(8)
V
V
2,5
2,5
CE
CE
[V]
[V]
3,0
3,0
V
I
GE
C
= f (V
= 15V
3,5
3,5
I
C
T
vj
= f (V
CE
= 125°C
)
4,0
4,0
CE
)
4,5
4,5
5,0
5,0
FF400R17KF6CB2