IRG4PH50U International Rectifier, IRG4PH50U Datasheet - Page 2

• Manufacturer Part Number: IRG4PH50U
• Description: 1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247AC package
• Manufacturer: International Rectifier

Specifications of IRG4PH50U

• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247AC
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Package: TO-247
• Circuit: Discrete
• Switching: Hard
• Switching Speed: ULTRAFAST 8-30 kHz
• Vces (v): 1200
• Ic @ 25c (a): 45
• Ic @ 100c (a): 24
• Vce(on)@25c Typ (v): 2.78
• Vce(on)@25c Max (v): 3.70
• Ets Typ (mj): 1.94
• Ets Max (mj): 2.6
• Pd @25c (w): 200
• Environmental Options: PbF
• Lead Free Status / RoHS Status: Not Compliant

IRG4PH50U
Electrical Characteristics @ T
Notes:
Q
R
Switching Characteristics @ T
V
V
V
g
I
I
V
E
Q
Q
Q
t
t
t
t
E
E
E
t
t
t
t
E
E
E
L
C
C
C
CES
GES
d(on)
d(off)
f
d(on)
d(off)
V
fe
r
r
f
(BR)CES
(BR)ECS
GE(th)
V
CE(ON)
E
ts
on
off
ts
ts
on
off
ies
oes
res
g
ge
gc
(BR)CES
GE(th)
Repetitive rating; V
max. junction temperature. ( See fig. 13b )
V
(See fig. 13a)
2
CC
/ T
/ T
= 80%(V
J
J
Parameter
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage T
Temperature Coeff. of Breakdown Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance U
Zero Gate Voltage Collector Current
Gate-to-Emitter Leakage Current
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Turn-On Switching Loss
Turn-Off Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Collector-to-Emitter Saturation Voltage
Total Switching Loss
CES
), V
GE
GE
= 20V, pulse width limited by
= 20V, L = 10µH, R
J
J
= 25°C (unless otherwise specified)
= 25°C (unless otherwise specified)
G
= 5.0 ,
Min. Typ. Max. Units
1200
Min. Typ. Max. Units
3.0
18
23
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1.20
2.56
2.78
3.20
2.54
3600
0.53
1.41
1.94
5.40
0.35
1.43
1.78
4.56
-13
160
200
290
320
280
160
35
S
T
U
—
—
—
—
—
—
—
27
53
35
15
31
18
13
31
Repetitive rating; pulse width limited by maximum
junction temperature.
Pulse width
Pulse width 5.0µs, single shot.
5000
±100
250
3.5
3.7
6.0
2.0
250
350
500
—
—
—
—
—
—
—
2.6
2.9
40
83
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
mV/°C V
V/°C
mJ
mJ
µA
nA
ns
ns
mJ
V
nC
nH
V
V
S
pF
80µs; duty factor
V
V
V
V
V
V
V
V
V
I
I
V
V
T
I
V
Energy losses include "tail"
See Fig. 9, 10, 14
T
I
V
Energy losses include "tail"
See Fig. 11, 14
T
I
Energy losses include "tail"
See Fig. 9, 10, 11, 14,
Measured 5mm from package
V
V
ƒ = 1.0MHz
C
I
I
I
C
C
C
C
GE
GE
GE
CE
CE
CE
GE
GE
GE
GE
C
C
C
J
J
J
CC
GE
GE
GE
GE
CC
= 20A
= 24A
= 24A, V
= 24A, V
= 20A, V
= 25°C
= 25°C V
= 24A
= 45A
= 24A , T
= 150°C
= 0V, I
= 0V, I
= 0V, I
= V
= V
= 0V, V
= 0V, V
= 0V, V
= ±20V
= 400V
= 15V
= 15V, R
= 15V, R
= 0V
= 30V
100V, I
GE
GE
Conditions
Conditions
, I
, I
C
C
C
CE
CE
CE
C
C
J
= 250µA
= 1.0A
= 1.0mA
CC
CC
CC
C
= 250µA
= 250µA
= 150°C
GE
= 1200V
= 24V, T
= 1200V, T
G
G
= 24A
= 960V
= 960V
= 960V
= 5.0
= 5.0
= 15V, R
0.1%.
See Fig. 8
See Fig. 7
J
= 25°C
V
www.irf.com
See Fig.2, 5
J
GE
= 150°C
G
T
J
= 15V
= 5.0
= 150°C