IRG4PH50U International Rectifier, IRG4PH50U Datasheet

1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247AC package

IRG4PH50U

Manufacturer Part Number
IRG4PH50U
Description
1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247AC package
Manufacturer
International Rectifier
Datasheet

Specifications of IRG4PH50U

Channel Type
N
Configuration
Single
Collector-emitter Voltage
1.2kV
Gate To Emitter Voltage (max)
±20V
Package Type
TO-247AC
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Package
TO-247
Circuit
Discrete
Switching
Hard
Switching Speed
ULTRAFAST 8-30 kHz
Vces (v)
1200
Ic @ 25c (a)
45
Ic @ 100c (a)
24
Vce(on)@25c Typ (v)
2.78
Vce(on)@25c Max (v)
3.70
Ets Typ (mj)
1.94
Ets Max (mj)
2.6
Pd @25c (w)
200
Environmental Options
PbF
Lead Free Status / RoHS Status
Not Compliant

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Part Number
Manufacturer
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Price
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INSULATED GATE BIPOLAR TRANSISTOR
• UltraFast: Optimized for high operating
• New IGBT design provides tighter
• Optimized for power conversion; SMPS, UPS
• Industry standard TO-247AC package
Benefits
• Higher switching frequency capability than
• Highest efficiency available
• Much lower conduction losses than MOSFETs
• More efficient than short circuit rated IGBTs
Absolute Maximum Ratings
Thermal Resistance
Features
Features
Features
Features
Features
V
I
I
I
I
V
E
P
P
T
T
R
R
R
Wt
parameter distribution and higher efficiency than
competitive IGBTs
www.irf.com
previous generations
C
C
CM
LM
frequencies up to 40 kHz in hard switching,
>200 kHz in resonant mode
and welding
J
STG
CES
GE
ARV
D
D
JC
CS
JA
@ T
@ T
@ T
@ T
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Parameter
Parameter
G
n-channel
300 (0.063 in. (1.6mm) from case )
6 (0.21)
Typ.
0.24
–––
–––
E
C
10 lbf•in (1.1N•m)
-55 to + 150
IRG4PH50U
TO-247AC
Max.
1200
± 20
180
180
170
200
45
24
78
Ultra Fast Speed IGBT
V
@V
CE(on) typ.
V
Max.
GE
0.64
–––
–––
CES
40
PD - 91574B
= 15V, I
= 1200V
C
2.78V
= 24A
Units
Units
01/14/02
g (oz)
°C/W
mJ
W
°C
V
A
V
1

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IRG4PH50U Summary of contents

Page 1

... STG Soldering Temperature, for 10 seconds Mounting torque, 6- screw. Thermal Resistance Parameter R Junction-to-Case JC R Case-to-Sink, Flat, Greased Surface CS R Junction-to-Ambient, typical socket mount JA Wt Weight www.irf.com PD - 91574B IRG4PH50U Ultra Fast Speed IGBT C V CES V CE(on) typ 15V n-channel TO-247AC Max. 1200 45 24 ...

Page 2

... IRG4PH50U Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES Emitter-to-Collector Breakdown Voltage T V (BR)ECS Temperature Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Saturation Voltage CE(ON) V Gate Threshold Voltage GE(th Temperature Coeff. of Threshold Voltage GE(th) J Forward Transconductance Zero Gate Voltage Collector Current CES I Gate-to-Emitter Leakage Current ...

Page 3

... D uty ° 0° ate driv ifie issipa tio n = 40W 1 f, Frequency (kHz) (Load Current = I of fundamental) RMS 1000 100  T = 150 15V Fig Typical Transfer Characteristics IRG4PH50U Tria ngula lam p v olta ted 50V CC 5µs PULSE WIDTH Gate-to-Emitter Voltage (V) GE ...

Page 4

... IRG4PH50U 100 T , Case Temperature ( C Fig Maximum Collector Current vs. Case Temperature 1 0.50 0.20 0.1 0.10 0.05 0.02  0.01 SINGLE PULSE (THERMAL RESPONSE) 0.01 0.001 0.00001 0.0001 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case 15V PULSE WIDTH 3.5 3.0 2.5 2.0 125 ...

Page 5

... SHORTED 100 0 Fig Typical Gate Charge vs. 100 5 15V 960V -60 -40 -20 Fig Typical Switching Losses vs. IRG4PH50U = 400V = 24A 40 80 120 160 Q , Total Gate Charge (nC) G Gate-to-Emitter Voltage 48A 24A 12A 100 120 140 160 Junction Temperature (°C) Junction Temperature 200 5 ...

Page 6

... IRG4PH50U 5 150° 15V 960V Collector Current (A) Fig Typical Switching Losses vs. Collector-to-Emitter Current 6  1000 V = 20V 125 C J 100 10  SAFE OPERATING AREA Collector-to-Emitter Voltage (V) CE Fig Turn-Off SOA o 100 1000 10000 www.irf.com ...

Page 7

... Clamped Inductive Load Test Circuit D river* 50V 1000V www.irf.com 960V R Fig. 13b - . ff t=5µ IRG4PH50U 960V 25° 480µF 960V Pulsed Collector Current Test Circuit Fig. 14a - Switching Loss Test Circuit * Driver same type as D.U.T 960V Fig. 14b - Switching Loss Waveforms 7 ...

Page 8

... IRG4PH50U Case Outline and Dimensions — TO-247AC (. (. (. (. (. (. (. (. (. (. (. (. CONFORMS TO JEDEC OUTLINE TO-247AC (TO-3P) WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel 1883 732020 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel 6172 96590 IR JAPAN: K& ...

Page 9

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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