BAQ806T NXP Semiconductors, BAQ806T Datasheet - Page 3

• Manufacturer Part Number: BAQ806T
• Manufacturer: NXP Semiconductors
• Type: Attenuatorr

Specifications of BAQ806T

• Configuration: Single
• Forward Voltage: 1.1V
• Operating Temperature Classification: Military
• Reverse Voltage: 100V
• Mounting: Surface Mount
• Operating Temperature (max): 150C
• Operating Temperature (min): -65C
• Pin Count: 2
• Lead Free Status / RoHS Status: Supplier Unconfirmed

Philips Semiconductors
ELECTRICAL CHARACTERISTICS
T
THERMAL CHARACTERISTICS
Note
1. Device mounted on Al
2. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper 40 m, see Fig. 15.
1998 Aug 03
V
I
C
r
r
R
R
SYMBOL
SYMBOL
j
R
D
s
F
= 25 C unless otherwise specified.
d
th j-tp
th j-a
AM PIN diode
For more information please refer to the ‘General Part of Handbook SC10’
forward voltage
reverse current
charge carrier life time
diode capacitance
diode forward resistance
diode series resistance
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
PARAMETER
2
O
3
printed-circuit board, 0.7 mm thick; thickness of copper 35 m, see Fig. 15
PARAMETER
I
I
see Figs 2 and 3
V
V
when switched from I
I
see Fig. 13
f = 1 MHz; see Figs 5, 6, 7 and 8
f = 100 kHz; see Figs 9 and 14
f = 100 kHz; see Figs 10, 11 and 12
f = 1 MHz; see Figs 10, 11 and 12
F
F
R
V
V
I
I
I
I
V
V
V
V
F
F
F
F
R
R
R
R
R
R
R
R
= 100 mA; see Figs 2 and 3
= 100 mA; T
= 6 mA; measured at 10% of I
= 10 A
= 100 A
= 1 mA
= 10 mA
= 100 V; see Fig. 4
= 100 V; T
= 0 V
= 2 V
= 0 V
= 2 V
= 0 V
= 2 V
CONDITIONS
j
j
= 125 C; see Fig. 4
= T
3
j max
F
= 10 mA to
;
note 1
note 2
R
;
CONDITIONS
1000
5000
MIN.
100
15
25
12000
3300
2100
TYP.
560
250
0.9
0.7
25
62
50
9
5
7
Product specification
VALUE
6000
MAX.
100
150
900
1.1
0.9
0.1
30
25
90
10
11
BAQ806
6
V
V
pF
pF
k
k
k
k
A
A
s
UNIT
UNIT
K/W
K/W
K/W