SSTUM32865ET/G-T NXP Semiconductors, SSTUM32865ET/G-T Datasheet

SSTUM32865ET/G-T

Manufacturer Part Number
SSTUM32865ET/G-T
Description
Manufacturer
NXP Semiconductors
Datasheet

Specifications of SSTUM32865ET/G-T

Logic Family
SSTU
Logical Function
Reg Bfr W/ParityTst
Number Of Elements
1
Number Of Bits
28
Number Of Inputs
28
Number Of Outputs
56
High Level Output Current
-8mA
Low Level Output Current
8mA
Propagation Delay Time
3ns
Operating Supply Voltage (typ)
1.8V
Operating Supply Voltage (max)
2V
Operating Supply Voltage (min)
1.7V
Clock-edge Trigger Type
Posit/Negat-Edge
Polarity
Non-Inverting
Technology
CMOS
Frequency (max)
450(Min)MHz
Mounting
Surface Mount
Pin Count
160
Operating Temp Range
0C to 70C
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Compliant
1. General description
2. Features
The SSTUM32865 is a 1.8 V 28-bit 1 : 2 register specifically designed for use on two rank
by four (2R
is similar in function to the JEDEC-standard 14-bit DDR2 register, but integrates the
functionality of the normally required two registers in a single package, thereby freeing up
board real-estate and facilitating routing to accommodate high-density Dual In-line
Memory Module (DIMM) designs.
The SSTUM32865 also integrates a parity function, which accepts a parity bit from the
memory controller, compares it with the data received on the D-inputs and indicates
whether a parity error has occurred on its open-drain PTYERR pin (active LOW).
It further offers added features over the JEDEC standard register in that it is permanently
configured for high output drive strength. This allows use in high density designs with
heavier than normal net loading conditions. Furthermore, the SSTUM32865 features two
additional chip select inputs, which allow more versatile enabling and disabling in densely
populated memory modules. Both added features (drive strength and chip selects) are
fully backward compatible to the JEDEC standard register.
The SSTUM32865 is packaged in a 160-ball, 12
fine-pitch ball grid array (TFBGA) package, which, while requiring a minimum
9 mm
conventional card technology.
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SSTUM32865
1.8 V 28-bit 1 : 2 registered buffer with parity for DDR2-800
RDIMM applications
Rev. 01 — 19 September 2007
28-bit data register supporting DDR2
Fully compliant to JEDEC standard for SSTUB32865
Supports 2 rank by 4 DIMM density by integrating equivalent functionality of two
JEDEC-standard DDR2 registers (that is, 2
Parity checking function across 22 input data bits
Parity out signal
Controlled multi-impedance output impedance drivers enable optimal signal integrity
and speed
Meets or exceeds SSTUB32865 JEDEC standard speed performance
Supports up to 450 MHz clock frequency of operation
Permanently configured for high output drive
Optimized pinout for high-density DDR2 module design
Chip-selects minimize power consumption by gating data outputs from changing state
Two additional chip select inputs allow optional flexible enabling and disabling
13 mm of board space, allows for adequate signal routing and escape using
4) and similar high-density Double Data Rate 2 (DDR2) memory modules. It
SSTUB32864 or 2
18 grid, 0.65 mm ball pitch, thin profile
Product data sheet
SSTUB32866)

Related parts for SSTUM32865ET/G-T

SSTUM32865ET/G-T Summary of contents

Page 1

SSTUM32865 1.8 V 28-bit registered buffer with parity for DDR2-800 RDIMM applications Rev. 01 — 19 September 2007 1. General description The SSTUM32865 is a 1.8 V 28-bit register specifically designed for use on ...

Page 2

... SSTUM32865ET/G Pb-free (SnAgCu solder ball compound) SSTUM32865ET/S Pb-free (SnAgCu solder ball compound) 4.1 Ordering options Table 2. Type number SSTUM32865ET/G SSTUM32865ET/S SSTUM32865_1 Product data sheet 13 mm, 0.65 mm ball pitch TFBGA package Package Name Description TFBGA160 plastic thin fine-pitch ball grid array package; ...

Page 3

... NXP Semiconductors 5. Functional diagram VREF PARIN D0 D21 DCS0 CSGATEEN DCS1 DCS2 DCS3 DCKE0, 2 DCKE1 DODT0, 2 DODT1 RESET CK CK Fig 1. Functional diagram of SSTUM32865 SSTUM32865_1 Product data sheet 1.8 V DDR2-800 registered buffer with parity (CS ACTIVE) PARITY GENERATOR D Q AND 22 R CHECKER Rev. 01 — 19 September 2007 ...

Page 4

... NXP Semiconductors 6. Pinning information 6.1 Pinning Fig 2. Pin configuration for TFBGA160 SSTUM32865_1 Product data sheet 1.8 V DDR2-800 registered buffer with parity SSTUM32865ET/G SSTUM32865ET/S ball A1 index area Transparent top view Rev. 01 — 19 September 2007 SSTUM32865 002aac648 © NXP B.V. 2007. All rights reserved. ...

Page 5

... NXP Semiconductors VREF n.c. PARIN n. D11 D9 F D18 D12 G CSGATEEN D15 H CK DCS0 J CK DCS1 K RESET D14 L D0 D10 M D17 D16 N D19 D21 P D13 D20 R DODT1 DODT0 T DCKE0 DCKE1 MCL U VREF MCL MCL V 160-ball grid; top view. An empty cell indicates no ball is populated at that grid point. ...

Page 6

... NXP Semiconductors 6.2 Pin description Table 3. Pin description Symbol Pin Ungated inputs DCKE0, DCKE1 U1, U2 DODT0, DODT1 T2, T1 Chip Select gated inputs D0 to D21 M1, B1, B2, C1, C2, D2, D1, E1, E2, F2, M2, F1, G2, R1, L2, H2, N2, N1, G1, P1, R2, P2 Chip Select inputs DCS0, DCS1, J2, K2, H4, K4 ...

Page 7

... NXP Semiconductors Table 3. Pin description …continued Symbol Pin Program inputs CSGATEEN H1 Clock inputs CK, CK J1, K1 Miscellaneous inputs MCL U3, V2, V3 MCH U5, V5 RESET L1 VREF A1, V1 VDDL D4, E4, E6, F4, G4, K5, N4, N5, P5, P6, R5, R6 VDDR E7, F8, F9, G8, G9, J8, J9, L8, L9, N8, N9, P7, P8 GND D5, D8, D9, E5, E8, E9, F5, ...

Page 8

... NXP Semiconductors 7. Functional description 7.1 Function table Table 4. Function table (each flip-flop) [2] [2] RESET DCS0 DCS1 CSGATEEN floating floating floating [ the previous state of the associated output. 0 [2] DCS2 and DCS3 operate identically to DCS0 and DCS1, except they do not have corresponding re-driven (QCS) outputs. ...

Page 9

... NXP Semiconductors [1] DCS2 and DCS3 operate identically to DCS0 and DCS1 with regard to the parity function. [2] PARIN arrives one clock cycle after the data to which it applies. All Dn inputs must be driven to a known state for parity to be calculated correctly. [3] This condition assumes PTYERR is HIGH at the crossing of CK going HIGH and CK going LOW. If PTYERR is LOW, it stays latched LOW for two clock cycles or until RESET is driven LOW. CSGATEEN is ‘ ...

Page 10

... NXP Semiconductors 7.3 Functional differences to SSTU32864 The SSTUM32865 for its basic register functionality, signal definition and performance is based upon the industry-standard SSTU32864, but provides key operational features which differ (at least in part) from the industry-standard register in the following aspects: 7.3.1 Chip Select (CS) gating of key inputs (DCS0, DCS1, DCS2, DCS3, ...

Page 11

... NXP Semiconductors RESET DCSn ACT ( PARIN PTYERR HIGH, LOW, or Don't care (1) After RESET is switched from LOW to HIGH, all data and PARIN input signals must be set and held LOW for a minimum time avoid false error. ACT(max) Fig 4. RESET switches from LOW to HIGH ...

Page 12

... NXP Semiconductors RESET DCSn PDM Qn PARIN PTYERR Unknown input event Fig 5. RESET being held HIGH SSTUM32865_1 Product data sheet PDMSS Output signal is dependent on the prior unknown event Rev. 01 — 19 September 2007 SSTUM32865 1.8 V DDR2-800 registered buffer with parity PHL PLH ...

Page 13

... NXP Semiconductors RESET DCSn (1) CK ( (1) PARIN PTYERR (1) After RESET is switched from HIGH to LOW, all data and clock input signals must be set and held at valid logic levels (not floating) for a minimum time of t Fig 6. RESET switches from HIGH to LOW SSTUM32865_1 Product data sheet ...

Page 14

... NXP Semiconductors PARIN CLOCK (1) This function holds the error for two cycles. For details, see switches from LOW to HIGH”. Fig 7. Parity logic diagram SSTUM32865_1 Product data sheet 1.8 V DDR2-800 registered buffer with parity Section 7 “Functional description” Rev. 01 — 19 September 2007 ...

Page 15

... V ref [1] data inputs (Dn) - [1] data inputs (Dn) V ref [1] data inputs (Dn) - [2] RESET 0.65 [2] RESET - CK, CK 0.675 CK, CK 600 - - operating in free air SSTUM32865ET/G 0 SSTUM32865ET/S 0 Rev. 01 — 19 September 2007 SSTUM32865 Min Max 0.5 +2.5 [1] 0.5 +2.5 [ 100 65 +150 ...

Page 16

... NXP Semiconductors 10. Characteristics Table 9. Characteristics Over recommended operating conditions, unless otherwise noted. Symbol Parameter V HIGH-level output voltage OH V LOW-level output voltage OL I input current I I supply current DD I dynamic operating current per MHz DDD C input capacitance i Z output impedance o [1] Instantaneous is defined as within < following the output data transition edge. ...

Page 17

... NXP Semiconductors Table 10. Timing requirements Over recommended operating conditions, unless otherwise noted. Symbol Parameter f clock frequency clock t pulse width W t differential inputs active time ACT t differential inputs inactive time INACT t set-up time su t hold time h [1] This parameter is not necessarily production tested. ...

Page 18

... NXP Semiconductors 11. Test information 11.1 Test circuit All input pulses are supplied by generators having the following characteristics: Pulse Repetition Rate (PRR) unless otherwise specified. The outputs are measured one at a time with one transition per measurement. CK inputs (1) C Fig 8. Load circuit (1) I Fig 9. Voltage and current waveforms ...

Page 19

... NXP Semiconductors Fig 11. Voltage waveforms; set-up and hold times Fig 12. Voltage waveforms; propagation delay times (clock to output) Fig 13. Voltage waveforms; propagation delay times (reset to output) SSTUM32865_1 Product data sheet input V ref V = 600 mV 0.5V . ref 250 mV (AC voltage levels) for differential inputs. V ...

Page 20

... NXP Semiconductors 11.2 Output slew rate measurement All input pulses are supplied by generators having the following characteristics: PRR 10 MHz; Z (1) C Fig 14. Load circuit, HIGH-to-LOW slew measurement Fig 15. Voltage waveforms, HIGH-to-LOW slew rate measurement (1) C Fig 16. Load circuit, LOW-to-HIGH slew measurement Fig 17 ...

Page 21

... NXP Semiconductors 11.3 Error output load circuit and voltage measurement All input pulses are supplied by generators having the following characteristics: PRR 10 MHz; Z (1) C Fig 18. Load circuit, error output measurements Fig 19. Voltage waveforms, open-drain output LOW-to-HIGH transition time with respect to Fig 20. Voltage waveforms, open-drain output HIGH-to-LOW transition time with respect ...

Page 22

... NXP Semiconductors Fig 21. Voltage waveforms, open-drain output LOW-to-HIGH transition time with respect to SSTUM32865_1 Product data sheet timing V ICR inputs t LH output waveform 2 clock inputs Rev. 01 — 19 September 2007 SSTUM32865 1.8 V DDR2-800 registered buffer with parity V V i(p-p) ICR 002aaa503 © NXP B.V. 2007. All rights reserved. ...

Page 23

... NXP Semiconductors 12. Package outline TFBGA160: plastic thin fine-pitch ball grid array package; 160 balls; body 0.7 mm ball A1 index area ball index area 2 DIMENSIONS (mm are the original dimensions) A UNIT max 0.35 0.80 0.45 mm 1.15 0.25 0.65 0.35 OUTLINE VERSION IEC - - - SOT802-2 Fig 22. Package outline SOT802-2 (TFBGA160) ...

Page 24

... NXP Semiconductors 13. Soldering This text provides a very brief insight into a complex technology. A more in-depth account of soldering ICs can be found in Application Note AN10365 “Surface mount reflow soldering description” . 13.1 Introduction to soldering Soldering is one of the most common methods through which packages are attached to Printed Circuit Boards (PCBs), to form electrical circuits ...

Page 25

... NXP Semiconductors 13.4 Reflow soldering Key characteristics in reflow soldering are: • Lead-free versus SnPb soldering; note that a lead-free reflow process usually leads to higher minimum peak temperatures (see reducing the process window • Solder paste printing issues including smearing, release, and adjusting the process window for a mix of large and small components on one board • ...

Page 26

... NXP Semiconductors Fig 23. Temperature profiles for large and small components For further information on temperature profiles, refer to Application Note AN10365 “Surface mount reflow soldering description” . 14. Abbreviations Table 15. Acronym CMOS DDR2 DIMM DRAM LVCMOS MT/s RDIMM SSTL SSTL_18 15. Revision history Table 16 ...

Page 27

... For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail ...

Page 28

... NXP Semiconductors 18. Contents 1 General description . . . . . . . . . . . . . . . . . . . . . . 1 2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 4 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4.1 Ordering options . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 3 6 Pinning information . . . . . . . . . . . . . . . . . . . . . . 4 6.1 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 6.2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 6 7 Functional description . . . . . . . . . . . . . . . . . . . 8 7.1 Function table . . . . . . . . . . . . . . . . . . . . . . . . . . 8 7.2 Functional information . . . . . . . . . . . . . . . . . . . 9 7.3 Functional differences to SSTU32864 . . . . . . 10 7.3.1 Chip Select (CS) gating of key inputs (DCS0, DCS1, DCS2, DCS3, CSGATEEN) ...

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