5962-89689012A QP SEMICONDUCTOR, 5962-89689012A Datasheet - Page 16

• Manufacturer Part Number: 5962-89689012A
• Manufacturer: QP SEMICONDUCTOR

Specifications of 5962-89689012A

• Logical Function: Mux
• Configuration: 4 x 2:1
• Number Of Inputs: 8
• Number Of Outputs: 4
• Operating Supply Voltage (typ): 5V
• Operating Supply Voltage (min): 4.5V
• Operating Supply Voltage (max): 5.5V
• Power Dissipation: 500mW
• Operating Temp Range: -55C to 125C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 20
• Package Type: CLLCC
• Lead Free Status / RoHS Status: Not Compliant

DSCC FORM 2234
APR 97
or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The
test circuit shall be maintained under document revision level control by the device manufacturer's TRB in accordance with
MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the
inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1005 of
MIL-STD-883.
(see 3.5 herein).
method 1019, condition A, and as specified herein:
greater than 5k rads (Si). The post-anneal end-point electrical parameter limits shall be as specified in table IA herein and shall
be the pre-irradiation end-point electrical parameter limits at 25C 5C. Testing shall be performed at initial qualification and
after any design or process changes which may affect the RHA response of the device.
Currents given are conventional current and positive when flowing into the referenced terminal.
Q and V or MIL-PRF-38535, appendix A for device class M.
(original equipment), design applications, and logistics purposes.
prepared specification or drawing.
the individual documents. This coordination will be accomplished using DD Form 1692, Engineering Change Proposal.
4.4.2.2 Additional criteria for device classes Q and V. The steady-state life test duration, test condition and test temperature,
4.4.3 Group D inspection. The group D inspection end-point electrical parameters shall be as specified in table II herein.
4.4.4 Group E inspection. Group E inspection is required only for parts intended to be marked as radiation hardness assured
4.4.4.1.1 Accelerated annealing testing. Accelerated annealing tests shall be performed on all devices requiring a RHA level
5. PACKAGING
5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-PRF-38535 for device classes
6. NOTES
6.1 Intended use. Microcircuits conforming to this drawing are intended for use for Government microcircuit applications
6.1.1 Replaceability. Microcircuits covered by this drawing will replace the same generic device covered by a contractor-
6.2 Configuration control of SMD's. All proposed changes to existing SMD's will be coordinated with the users of record for
4.4.4.1 Total dose irradiation testing. Total dose irradiation testing shall be performed in accordance with MIL-STD-883,
4.5 Methods of inspection. Methods of inspection shall be specified as follows:
4.5.1 Voltage and current. Unless otherwise specified, all voltages given are referenced to the microcircuit GND terminal.
Prior to and during total dose irradiation characterization and testing, the devices for characterization shall be biased so that
50 percent are at inputs high and 50 percent are at inputs low, and the devices for testing shall be biased to the worst case
condition established during characterization. Devices shall be biased as follows:
a.
b.
1. Inputs tested high, V
2. Inputs tested low, V
T
A
End-point electrical parameters shall be as specified in table II herein.
For device classes Q and V, the devices or test vehicle shall be subjected to radiation hardness assured tests as
specified in MIL-PRF-38535 for the RHA level being tested. For device class M, the devices shall be subjected to
radiation hardness assured tests as specified in MIL-PRF-38535, appendix A for the RHA level being tested. All device
classes must meet the postirradiation end-point electrical parameter limits as defined in table I at
DEFENSE SUPPLY CENTER COLUMBUS
open.
= +25C 5C, after exposure, to the subgroups specified in table II herein.
MICROCIRCUIT DRAWING
COLUMBUS, OHIO 43218-3990
STANDARD
CC
CC
= 5.5 V dc +5%, R
= 5.5 V dc +5%, R
CC
CC
= 10 20%, V
= 10 20%, V
IN
IN
= 0.0 V dc, R
SIZE
= 5.0 V dc +5%, R
A
REVISION LEVEL
IN
= 1 k 20%, and all outputs are open.
IN
= 1 k 20%, and all outputs are
D
SHEET
5962-89689
16