CYIS1SM1000AA-HHC Cypress Semiconductor Corp, CYIS1SM1000AA-HHC Datasheet - Page 2

• Manufacturer Part Number: CYIS1SM1000AA-HHC
• Description: Image Sensor Monochrome CMOS 1024x1024Pixels 84-Pin JLCC
• Manufacturer: Cypress Semiconductor Corp
• Type: CMOSr

Specifications of CYIS1SM1000AA-HHC

• Sensor Image Color Type: Monochrome
• Sensor Image Size Range: >= 480,000Pixels
• Sensor Image Size: 1024x1024Pixels
• Operating Supply Voltage (typ): 5V
• Operating Temp Range: 0C to 60C
• Package Type: JLCC
• Operating Temperature Classification: Commercial
• Mounting: Surface Mount
• Pin Count: 84
• Package: 84JLCC
• Image Size: 1024x1024 Pixels
• Color Sensing: Monochrome
• Operating Temperature: 0 to 60 °C
• Operating Supply Voltage: 5 V
• Lead Free Status / RoHS Status: Not Compliant

Image Sensor Specifications
General Specifications
Table 1. General Specifications of the STAR1000 Sensor
Electro-optical Specifications
Table 2. Electro-optical Specifications of the STAR1000 Sensor
Document Number: 38-05714 Rev. *D
Detector technology
Pixel structure
Photodiode
Sensitive area format
Pixel size
Pixel output rate
Windowing
Electronic shutter
Total dose radiation
tolerance
Proton radiation tolerance 2,4.10
SEU tolerance
Spectral range
Quantum efficiency x fill
factor
Full well capacity
Saturation capacity to
meet non-linearity within
+ 5%
Output signal swing
Conversion gain
kTC noise
Dynamic range
Fixed pattern noise
Photo response
non-uniformity at Sat/
2 (RMS)
Parameter
Parameter
CMOS active pixel sensor
3-transistor active pixel
High fill factor photodiode
1024 x 1024 pixels
15 x15 μm
12 MHz
X- and Y- addressing random programmable
Electronic rolling shutter.
Range - 1:1024
> 250 Krad (Si)
At 60 MeV
> 127,8 MeV cm
Global: 1σ <0.56%
Local: 1σ < 0.30%
Local: 1σ < 0.67%
Global: σ <3.93%
11
Typical Value
of full well
of full well
proton/cm
400-1000
135.000
99.000
2
20%
11.4
1.1
47
69
Specification
3
mg
2
Value
-1
μV/e-
Unit
nm
dB
e-
e-
e-
V
Average over the visual range. See spectral
response curve.
Radiation-tolerant pixel design.
Using N-well technique.
Speed can be altered for power consumption.
Integration time is variable in time steps equal to the
row readout time.
Pixel test structures with a similar design have
shown total dose tolerance up to several Mrad.
Note: Dark current and DSNU are dependent of
radiation dose.
Comment
Comment
STAR1000
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