M48Z58Y70MH1 STMicroelectronics, M48Z58Y70MH1 Datasheet - Page 12

• Manufacturer Part Number: M48Z58Y70MH1
• Manufacturer: STMicroelectronics
• Type: NVSRAMr

Specifications of M48Z58Y70MH1

• Word Size: 8b
• Organization: 8Kx8
• Density: 64Kb
• Interface Type: Parallel
• Access Time (max): 70ns
• Operating Supply Voltage (typ): 5V
• Package Type: SOH
• Operating Temperature Classification: Commercial
• Operating Supply Voltage (max): 5.5V
• Operating Supply Voltage (min): 4.5V
• Operating Temp Range: 0C to 70C
• Pin Count: 28
• Mounting: Surface Mount
• Supply Current: 50mA
• Lead Free Status / RoHS Status: Compliant

Operating modes
2.4
12/24
V
I
fluctuations, resulting in spikes on the V
capacitors are used to store energy which stabilizes the V
bypass capacitors will be released as low going spikes are generated or energy will be
absorbed when overshoots occur. A ceramic bypass capacitor value of 0.1 µF (see
is recommended in order to provide the needed filtering.
In addition to transients that are caused by normal SRAM operation, power cycling can
generate negative voltage spikes on V
one volt. These negative spikes can cause data corruption in the SRAM while in battery
backup mode. To protect from these voltage spikes, ST recommends connecting a schottky
diode from V
is recommended for through hole and MBRS120T3 is recommended for surface mount).
Figure 8.
CC
CC
transients, including those produced by output switching, can produce voltage
noise and negative going transients
CC
Supply voltage protection
to V
SS
(cathode connected to V
V CC
Doc ID 2559 Rev 10
0.1µF
CC
CC
that drive it to values below V
bus. These transients can be reduced if
CC
, anode to V
V CC
V SS
DEVICE
CC
bus. The energy stored in the
SS
). (Schottky diode 1N5817
SS
M48Z58, M48Z58Y
by as much as
Figure
AI02169
8)