STK22C48-WF25 Cypress Semiconductor Corp, STK22C48-WF25 Datasheet - Page 5

• Manufacturer Part Number: STK22C48-WF25
• Manufacturer: Cypress Semiconductor Corp
• Type: NVSRAMr

Specifications of STK22C48-WF25

• Word Size: 8b
• Organization: 2Kx8
• Density: 16Kb
• Interface Type: Parallel
• Access Time (max): 25ns
• Operating Supply Voltage (typ): 5V
• Package Type: PDIP
• Operating Temperature Classification: Commercial
• Operating Supply Voltage (max): 5.5V
• Operating Supply Voltage (min): 4.5V
• Operating Temp Range: 0C to 70C
• Pin Count: 28
• Mounting: Through Hole
• Supply Current: 85mA
• Lead Free Status / RoHS Status: Compliant

Figure 3. Current Versus Cycle Time (Read)
Figure 4. Current Versus Cycle Time (Write)
Preventing Store
The STORE function is disabled by holding HSB high with a
driver capable of sourcing 30 mA at a V
because it must overpower the internal pull down device. This
Table 1. Hardware Mode Selection
Notes
Document Number: 001-51000 Rev. *A
1. I/O state assumes OE < V
2. HSB STORE operation occurs only if an SRAM Write is done since the last nonvolatile cycle. After the STORE (If any) completes, the part goes into standby mode,
inhibiting all operations until HSB rises.
CE
H
X
L
L
IL
. Activation of nonvolatile cycles does not depend on state of OE.
WE
X
H
X
L
HSB
OH
H
H
H
L
of at least 2.2V,
A10–A0
X
X
X
X
device drives HSB LOW for 20 ns at the onset of a STORE.
When the STK22C48 is connected for AutoStore operation
(system V
and V
attempts to pull HSB LOW. If HSB does not actually get below
V
attempt.
Best Practices
nvSRAM products have been used effectively for over 15 years.
While ease of use is one of the product’s main system values,
experience gained working with hundreds of applications has
resulted in the following suggestions as best practices:
■
■
■
IL
The nonvolatile cells in an nvSRAM are programmed on the
test floor during final test and quality assurance. Incoming
inspection routines at customer or contract manufacturer’s
sites sometimes reprogram these values. Final NV patterns are
typically repeating patterns of AA, 55, 00, FF, A5, or 5A. The
end product’s firmware should not assume that an NV array is
in a set programmed state. Routines that check memory
content values to determine first time system configuration,
cold or warm boot status, and so on must always program a
unique NV pattern (for example, complex 4-byte pattern of 46
E6 49 53 hex or more random bytes) as part of the final system
manufacturing test to ensure these system routines work
consistently.
Power up boot firmware routines should rewrite the nvSRAM
into the desired state. While the nvSRAM is shipped in a preset
state, best practice is to again rewrite the nvSRAM into the
desired state as a safeguard against events that might flip the
bit inadvertently (program bugs, incoming inspection routines,
and so on).
The V
and a maximum value size. The best practice is to meet this
requirement and not exceed the maximum V
the higher inrush currents may reduce the reliability of the
internal pass transistor. Customers who want to use a larger
V
discuss their V
, the part stops trying to pull HSB LOW and abort the STORE
CAP
Nonvolatile STORE
CC
CAP
value to make sure there is extra store charge should
Not Selected
Read SRAM
Write SRAM
crosses V
CC
value specified in this data sheet includes a minimum
Mode
connected to V
CAP
SWITCH
size selection with Cypress.
CC
on the way down, the STK22C48
Output High Z
Output High Z
Output Data
Input Data
and a 68 μF capacitor on V
I/O
CAP
STK22C48
value because
Standby
Active
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Power
Active
I
CC2
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