M48Z18-100MH1 STMicroelectronics, M48Z18-100MH1 Datasheet - Page 11

• Manufacturer Part Number: M48Z18-100MH1
• Manufacturer: STMicroelectronics
• Type: NVSRAMr

Specifications of M48Z18-100MH1

• Word Size: 8b
• Organization: 8Kx8
• Density: 64Kb
• Interface Type: Parallel
• Access Time (max): 100ns
• Operating Supply Voltage (typ): 5V
• Package Type: SOH
• Operating Temperature Classification: Commercial
• Operating Supply Voltage (max): 5.5V
• Operating Supply Voltage (min): 4.5V
• Operating Temp Range: 0C to 70C
• Pin Count: 28
• Mounting: Surface Mount
• Supply Current: 80mA
• Lead Free Status / RoHS Status: Supplier Unconfirmed

M48Z08, M48Z18
2.4
V
I
fluctuations, resulting in spikes on the V
capacitors are used to store energy which stabilizes the V
bypass capacitors will be released as low going spikes are generated or energy will be
absorbed when overshoots occur. A ceramic bypass capacitor value of 0.1 µF (as shown in
Figure
In addition to transients that are caused by normal SRAM operation, power cycling can
generate negative voltage spikes on V
one volt. These negative spikes can cause data corruption in the SRAM while in battery
backup mode. To protect from these voltage spikes, STMicroelectronics recommends
connecting a Schottky diode from V
Schottky diode 1N5817 is recommended for through hole and MBRS120T3 is
recommended for surface mount.
Figure 7.
CC
CC
transients, including those produced by output switching, can produce voltage
noise and negative going transients
7) is recommended in order to provide the needed filtering.
Supply voltage protection
V CC
Doc ID 2424 Rev 7
0.1µF
CC
CC
to V
CC
that drive it to values below V
SS
bus. These transients can be reduced if
(cathode connected to V
V CC
V SS
DEVICE
CC
bus. The energy stored in the
CC
SS
Operation modes
, anode to V
by as much as
AI02169
SS
11/20
).