STK11C68-5KF45M Cypress Semiconductor Corp, STK11C68-5KF45M Datasheet

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STK11C68-5KF45M

Manufacturer Part Number
STK11C68-5KF45M
Description
Manufacturer
Cypress Semiconductor Corp
Type
NVSRAMr
Datasheet

Specifications of STK11C68-5KF45M

Word Size
8b
Organization
8Kx8
Density
64Kb
Interface Type
Parallel
Access Time (max)
45ns
Operating Supply Voltage (typ)
5V
Package Type
CDIP
Operating Temperature Classification
Military
Operating Supply Voltage (max)
5.5V
Operating Supply Voltage (min)
4.5V
Operating Temp Range
-55C to 125C
Pin Count
28
Mounting
Through Hole
Supply Current
85mA
Lead Free Status / RoHS Status
Compliant
LOGIC BLOCK DIAGRAM
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
FEATURES
• 35, 45 and 55ns Access Times
• 17, 20 and 25ns Output Enable Access
• Unlimited Read and Write to
• Software
• Automatic
• 100,000
• 10 year data retention in
• Automatic
• Software
• Unlimited
• Single 5V
• Available in multiple standard packages
A
A
A
A
A
A
A
A
12
0
1
2
3
4
5
6
7
3
4
5
6
7
8
9
STORE
STORE
RECALL
RECALL
STORE
RECALL
10% Operation
cycles to
A
Initiation
0
Initiation
Timing
COLUMN DECODER
cycles from
A
on Power Up
STATIC RAM
1
COLUMN I/O
256 x 256
ARRAY
A
2
EEPROM ARRAY
EEPROM
EEPROM
A
10
256 x 256
SRAM
A
11
EEPROM
RECALL
STORE
MIL-STD-883/SMD # 5962-92324
8K x 8 Nonvolatile Static RAM
CONTROL
A
STORE/
RECALL
0
A
4-31
12
DESCRIPTION
The Simtek STK11C68-M is a fast static
and 55ns), with a nonvolatile electrically-erasable
(
cell. The
number of times, while independent nonvolatile data
resides in
the
SRAM
quences. It combines the high performance and ease
of use of a fast
The STK11C68-M is pin compatible with industry stan-
dard
ceramic DIP or 28-pad LCC package. Commercial and
industrial devices are also available.
EEPROM
EEPROM
W
G
E
SRAM
(
RECALL
DQ
DQ
) element incorporated in each static memory
SRAM
A
A
A
A
A
A
A
EEPROM
6
5
4
3
2
1
0
0
1
s and is available in a 28-pin 300 mil
10
11
12
PIN CONFIGURATIONS
4
5
6
7
8
9
High Performance
13
(
3
28 - LCC
STORE
TOP VIEW
14
SRAM
) are initiated through software se-
2
STK11C68-M
can be read and written an unlimited
15
A
W
DQ
E
G
V
V
1
0
CC
SS
CMOS nvSRAM
. Data transfers from the
28 27
16
- A
0
- DQ
17
PIN NAMES
12
), or from the
26
25
24
23
22
21
20
19
18
with nonvolatile data integrity.
7
NC
A
A
A
G
DQ
A
E
DQ
11
8
9
10
7
6
Address Inputs
Write Enable
Data In/Out
Chip Enable
Output Enable
Power (+5V)
Ground
DQ
DQ
DQ
A
V
NC
A
A
A
A
A
A
A
A
SS
12
28 - 300 C-DIP
7
6
5
4
3
2
1
0
0
1
2
1
2
3
4
5
6
7
8
9
10
11
12
13
14
EEPROM
STK11C68-M
28
27
26
25
24
23
22
21
20
19
18
17
16
15
RAM
V
W
NC
A
A
G
A
E
DQ
DQ
DQ
DQ
DQ
A
CC
11
8
9
10
SRAM
7
6
5
4
3
(35, 45
to the
PROM
to

Related parts for STK11C68-5KF45M

STK11C68-5KF45M Summary of contents

Page 1

... EEPROM ( SRAM RECALL quences. It combines the high performance and ease of use of a fast The STK11C68-M is pin compatible with industry stan- EEPROM dard s and is available in a 28-pin 300 mil SRAM ceramic DIP or 28-pad LCC package. Commercial and industrial devices are also available. ...

Page 2

... STK11C68-M ABSOLUTE MAXIMUM RATINGS Voltage on typical input relative –0.6V to 7.0V SS Voltage on DQ and .–0. 0-7 Temperature under bias . . . . . . . . . . . . . . . . . . . . . . – 125 C Storage temperature – 150 C Power dissipation .1W DC output current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15mA (One output at a time, one second duration) DC CHARACTERISTICS SYMBOL PARAMETER b I Average V ...

Page 3

... CC W STK11C68-35M PARAMETER MIN AVAV 3 t AVQV 5 t AXQX 11A t WHQV 2 t AVAV 1 t ELQV 6 t ELQX 4 t GLQV 8 t GLQX 11A t WHQV 4-33 STK11C68 5.0V 10%) CC STK11C68-45M STK11C68-55M UNITS MAX MIN MAX MIN MAX DATA VALID 11 t EHICCL 7 t EHQZ 9 t ...

Page 4

... IH Note low when E goes low, the outputs remain in the high impedance state. STK11C68-35M PARAMETER MIN MAX STK11C68-35M PARAMETER MIN MAX 4- 5.0V 10%) CC STK11C68-45M STK11C68-55M UNITS MIN MAX MIN MAX 5.0V 10%) CC STK11C68-45M STK11C68-55M MIN MAX MIN MAX UNITS ...

Page 5

... DATA OUT AVAV 14 t ELWH 17 t AVWH 13 t WLWH 15 t DVWH DATA VALID 20 t WLQZ HIGH IMPEDANCE AVAV 14 t ELEH 17 t AVEH 13 t WLEH 15 t DVEH DATA VALID HIGH IMPEDANCE 4-35 STK11C68 WHAX 16 t WHDX 21 t WHQX 19 t EHAX 16 t EHDX ...

Page 6

... STK11C68-M NONVOLATILE MEMORY OPERATION MODE SELECTION (hex 0000 1555 0AAA 1FFF 10F0 0F0F L H 0000 1555 0AAA 1FFF 10F0 0F0E Note n: The six consecutive addresses must be in order listed - (0000, 1555, 0AAA, 1FFF, 10F0, 0F0F) for a STORE cycle or (0000, 1555, 0AAA,1FFF, 10F0, 0F0E) for a RECALL cycle ...

Page 7

... CC exceeds 4.0V measured from the point at which V CC RECALL (see #2) but greater than or equal to t READ CYCLE ELQV table. Address #6 determines whether the STK11C68-M performs a STORE or RECALL MODE SELECTION 22 t AVAV ADDRESS # EHAXN t DATA VALID 4-37 STK11C68 ...

Page 8

... AVQV for transitions on any control input pins, and will remain valid until another address change or until brought HIGH brought LOW. The STK11C68 high speed memory and there- fore must have a high frequency bypass capacitor of approximately 0.1 F connected between DUT V and V using leads and traces that are as short as SS possible ...

Page 9

... Due to this automatic RECALL , SRAM operation cannot commence until t V exceeds 4.0V. 4. typical, characterized CC value. If the STK11C68 WRITE state at the end of power-up RECALL , the SRAM data will be corrupted. sense volt help avoid this situation, a 10K Ohm resistor should be connected between W and system V ...

Page 10

... STK11C68-M STK11C68 - 5962-92324 ORDERING INFORMATION Temperature Range M = Military (-55 to 125 degrees C) Access Time 35 = 35ns 45 = 45ns 55 = 55ns Package C = Ceramic 28 pin 300-mil DIP with gold lead finish K = Ceramic 28 pin 300-mil DIP with solder DIP finish L = Ceramic 28 pin LCC Retention / Endurance 10 years / 100,000 cycles ...

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