MT9HTF12872PY-800E1 Micron Technology Inc, MT9HTF12872PY-800E1 Datasheet - Page 15
![no-image](/images/manufacturer_photos/0/4/441/micron_technology_inc_sml.jpg)
MT9HTF12872PY-800E1
Manufacturer Part Number
MT9HTF12872PY-800E1
Description
Manufacturer
Micron Technology Inc
Datasheet
1.MT9HTF12872PY-800E1.pdf
(23 pages)
Specifications of MT9HTF12872PY-800E1
Main Category
DRAM Module
Sub-category
DDR2 SDRAM
Module Type
240RDIMM
Device Core Size
72b
Organization
128Mx72
Total Density
1GByte
Chip Density
1Gb
Maximum Clock Rate
800MHz
Operating Supply Voltage (typ)
1.8V
Operating Current
1.71A
Number Of Elements
9
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Operating Temp Range
0C to 70C
Operating Temperature Classification
Commercial
Pin Count
240
Mounting
Socket
Lead Free Status / RoHS Status
Compliant
Table 11: DDR2 I
Values shown for MT47H64M8 DDR2 SDRAM only and are computed from values specified in the 512Mb (64 Meg x 8)
component data sheet
PDF: 09005aef82250868
htf9c32_64_128x72.pdf - Rev. F 3/10 EN
Parameter
Operating bank interleave read current: All device banks interleaving
reads, I
=
HIGH, S# is HIGH between valid commands; Address bus inputs are stable
during deselects; Data bus inputs are switching
t
CK (I
OUT
DD
),
= 0mA; BL = 4, CL = CL (I
t
RC =
t
RC (I
DD
DD
Specifications and Conditions – 512MB (Continued)
),
t
RRD =
256MB, 512MB, 1GB (x72, ECC, SR) 240-Pin DDR2 SDRAM RDIMM
t
RRD (I
DD
), AL =
DD
),
t
t
RCD (I
RCD =
DD
t
RCD (I
) - 1 ×
DD
15
t
CK (I
); CKE is
DD
);
t
CK
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Symbol
I
DD7
-80E/
2700
800
2160
-667
© 2003 Micron Technology, Inc. All rights reserved.
I
DD
-53E
2025
Specifications
1980
-40E
Units
mA