MT8LSDT1664HY-13EG3 Micron Technology Inc, MT8LSDT1664HY-13EG3 Datasheet - Page 9

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MT8LSDT1664HY-13EG3

Manufacturer Part Number
MT8LSDT1664HY-13EG3
Description
MODULE SDRAM 128MB 144SODIMM
Manufacturer
Micron Technology Inc
Series
-r
Datasheet

Specifications of MT8LSDT1664HY-13EG3

Memory Type
SDRAM
Memory Size
128MB
Speed
133MHz
Features
-
Package / Case
144-SODIMM
Lead Free Status / RoHS Status
Compliant
because unknown operation or incompatibility with
future versions may result.
Write Burst Mode
M2 applies to both READ and WRITE bursts; when
M9 = 1, the programmed burst length applies to READ
bursts, but write accesses are single-location (non-
burst) accesses.
09005aef8077d63a
SD8C8_16_32x64HG.fm - Rev. C 6/04 EN
Test modes and reserved states should not be used,
When M9 = 0, the burst length programmed via M0-
9
Table 8:
64MB, 128MB, 256MB (x64, DR)
SPEED
-13E
-133
-10E
Micron Technology, Inc., reserves the right to change products or specifications without notice.
144-PIN SDRAM SODIMM
CAS LATENCY = 2
CAS Latency Table
CLOCK FREQUENCY (MHz)
ALLOWABLE OPERATING
133
100
100
©2004 Micron Technology, Inc. All rights reserved.
CAS LATENCY = 3
NA
143
133

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