MT8LSDT1664HY-13EG3 Micron Technology Inc, MT8LSDT1664HY-13EG3 Datasheet - Page 6

• Manufacturer Part Number: MT8LSDT1664HY-13EG3
• Description: MODULE SDRAM 128MB 144SODIMM
• Manufacturer: Micron Technology Inc
• Series: -r

Specifications of MT8LSDT1664HY-13EG3

• Memory Type: SDRAM
• Memory Size: 128MB
• Speed: 133MHz
• Features: -
• Package / Case: 144-SODIMM
• Lead Free Status / RoHS Status: Compliant

General Description
and MT8LSDT3264(L)H(I) are high-speed CMOS,
dynamic random-access, memory modules organized
in a x64 configuration. These modules use SDRAM
devices which are internally configured as quad-bank
DRAMs with a synchronous interface (all signals are
registered on the positive edge of the clock signals CK).
burst oriented; accesses start at a selected location and
continue for a programmed number of locations in a
programmed sequence. Accesses begin with the regis-
tration of an ACTIVE command, which is then fol-
lowed by a READ or WRITE command. The address
bits registered coincident with the ACTIVE command
are used to select the device bank and row to be
accessed (BA0, BA1 select the device bank; device rows
are selected by A0–A11 for 64MB and 128MB; A0–A12
for 256MB). The address bits registered coincident
with the READ or WRITE command (A0–A7 for 64MB;
A0–A8 for 128MB and 256MB) are used to select the
starting device column location for the burst access.
or WRITE burst lengths of 1, 2, 4, or 8 locations, or the
full page, with a burst terminate option. An auto pre-
charge function may be enabled to provide a self-
timed row precharge that is initiated at the end of the
burst sequence. These modules use an internal pipe-
lined architecture to achieve high-speed operation.
This architecture is compatible with the 2n rule of
prefetch architectures, but it also allows the column
address to be changed on every clock cycle to achieve a
high-speed, fully random access.
device bank while accessing one of the other three
device banks will hide the precharge cycles and pro-
vide seamless, high-speed, random access operation.
low-power memory systems. An auto refresh mode is
provided, along with a power-saving, power-down
mode. All inputs, outputs, and clocks are LVTTL-com-
patible.
DRAM operating performance, including the ability to
synchronously burst data at a high data rate with auto-
matic column-address generation, the ability to inter-
leave between internal banks in order to hide
precharge time, and the capability to randomly change
column addresses on each clock cycle during a burst
access. For more information regarding SDRAM oper-
ation, refer to the 64Mb, 128Mb, or 256Mb SDRAM
component data sheets.
09005aef8077d63a
SD8C8_16_32x64HG.fm - Rev. C 6/04 EN
The Micron MT8LSDT864(L)H(I), MT8LSDT1664(L)H(I),
SDRAM modules provide for programmable READ
SDRAM modules are designed to operate in 3.3V,
SDRAM modules offer substantial advances in
Read and write accesses to SDRAM modules are
Precharging one
6
Serial Presence-Detect Operation
(SPD). The SPD function is implemented using a
2,048-bit EEPROM. This nonvolatile storage device
contains 256 bytes. The first 128 bytes can be pro-
grammed by Micron to identify the module type and
various SDRAM organizations and timing parameters.
The remaining 128 bytes of storage are available for
use by the customer. System READ/WRITE operations
between the master (system logic) and the slave
EEPROM device (DIMM) occur via a standard I
using the DIMM’s SCL (clock) and SDA (data) signals.
Write protect (WP) is tied to ground on the module,
permanently disabling hardware write protect.
Initialization
in a predefined manner. Operational procedures other
than those specified may result in undefined opera-
tion. Once power is applied to V
taneously) and the clock is stable (stable clock is
defined as a signal cycling within timing constraints
specified for the clock pin), the SDRAM requires a
100µs delay prior to issuing any command other than a
COMMAND INHIBIT or NOP . Starting at some point
during this 100µs period and continuing at least
through the end of this period, COMMAND INHIBIT
or NOP commands should be applied.
one COMMAND INHIBIT or NOP command having
been applied, a PRECHARGE command should be
applied. All device banks must then be precharged,
thereby placing the device in the all banks idle state.
must be performed. After the AUTO REFRESH cycles
are complete, the SDRAM is ready for mode register
programming. Because the mode register will power
up in an unknown state, it should be loaded prior to
applying any operational command.
Mode Register Definition
mode of operation of the SDRAM. This definition
includes the selection of a burst length, a burst type, a
CAS latency, an operating mode and a write burst
mode, as shown in Figure 4, Mode Register Definition
Diagram, on page 7. The mode register is programmed
via the LOAD MODE REGISTER command and will
retain the stored information until it is programmed
again or the device loses power.
64MB, 128MB, 256MB (x64, DR)
SDRAM modules incorporate serial presence-detect
SDRAM devices must be powered up and initialized
Once the 100µs delay has been satisfied with at least
Once in the idle state, two AUTO REFRESH cycles
The mode register is used to define the specific
Micron Technology, Inc., reserves the right to change products or specifications without notice.
144-PIN SDRAM SODIMM
©2004 Micron Technology, Inc. All rights reserved.
DD
and V
DD
Q (simul-
2
C bus