MT29F8G08ABABAWP:B Micron Technology Inc, MT29F8G08ABABAWP:B Datasheet - Page 40
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MT29F8G08ABABAWP:B
Manufacturer Part Number
MT29F8G08ABABAWP:B
Description
Manufacturer
Micron Technology Inc
Datasheet
1.MT29F8G08ABABAWPB.pdf
(142 pages)
Specifications of MT29F8G08ABABAWP:B
Lead Free Status / RoHS Status
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Table 5:
PDF: 09005aef8386131b / Source: 09005aef838cad98
m61a_async_sync_nand.fm - Rev. A 2/09 EN
COPYBACK PROGRAM
MULTI-PLANE
Command
Command Set (continued)
Notes:
1. Busy means RDY = "0".
2. These commands can be used for multi-LUN operations (see “Multi-LUN Operations” on
3. The READ ID (90h) and GET FEATURES (EEh) output identical data on rising and falling DQS
4. The SET FEATURES (EFh) command requires data transition prior to the rising edge of CLK,
5. This command can be preceded by up to one READ PAGE MULTI-PLANE (00h-32h) command
6. Issuing a READ PAGE CACHE-series (31h, 00h-31h, 00h-32h, 3Fh) command when the array is
7. Issuing a PROGRAM PAGE CACHE (80h-15h) command when the array is busy (RDY = "1",
8. Command cycle #2 of 11h is conditional. See “CHANGE ROW ADDRESS (85h)” for more
Command
page 86).
edges.
with identical data for the rising and falling edges.
to accommodate a maximum simultaneous two-plane array operation.
busy (RDY = "1", ARDY = "0") is supported if the previous command was a READ PAGE
(00h-30h) or READ PAGE CACHE-series command; otherwise it is prohibited.
ARDY = "0") is supported if the previous command was a PROGRAM PAGE CACHE (80h-15h)
command; otherwise it is prohibited.
details.
Cycle #1
85h
Micron Confidential and Proprietary
Address
# Valid
Cycles
8Gb Asychronous/Synchronous NAND Flash Memory
5
40
Optional
Cycles
Input
Data
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Command
Cycle #2
11h
Selected
LUN is
Busy
while
Valid
Command Definitions
©2008 Micron Technology, Inc. All rights reserved.
1
LUNs are
while
Other
Busy
Valid
Yes
2
Advance
Notes