K4H1G0438M-TLB0 Samsung Semiconductor, K4H1G0438M-TLB0 Datasheet - Page 5

• Manufacturer Part Number: K4H1G0438M-TLB0
• Manufacturer: Samsung Semiconductor
• Type: DDR SDRAMr

Specifications of K4H1G0438M-TLB0

• Organization: 256Mx4
• Density: 1Gb
• Address Bus: 16b
• Access Time (max): 750ps
• Maximum Clock Rate: 266MHz
• Operating Supply Voltage (typ): 2.5V
• Package Type: TSOP-II
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.3V
• Supply Current: 130mA
• Pin Count: 66
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Not Compliant

DDR SDRAM 1Gb M-die (x4, x8)
4.0 Pin Description
AP/A
V
V
V
CAS
RAS
V
V
DQ
DQ
DQ
DQ
BA
BA
V
V
WE
V
DDQ
NC
NC
DDQ
NC
NC
NC
DDQ
NC
NC
NC
NC
SSQ
SSQ
A
CS
A
A
A
A
DD
DD
DD
13
10
DM is internally loaded to match DQ and DQS identically.
0
1
2
3
0
1
0
1
2
3
Organization
AP/A
256Mx4
128Mx8
V
V
V
CAS
RAS
V
V
DQ
DQ
BA
BA
V
V
WE
V
NC
DDQ
NC
NC
NC
DDQ
NC
NC
NC
DDQ
NC
NC
NC
NC
SSQ
SSQ
A
CS
A
A
A
A
DD
DD
DD
10
13
Row & Column address configuration
0
1
0
1
0
1
2
3
23
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
24
25
26
27
28
29
30
31
32
33
1Gb TSOP-II Package Pinout
(0.65mm Pin Pitch)
(400mil x 875mil)
128Mb x 8
256Mb x 4
Bank Address
Auto Precharge
66Pin TSOPII
BA0~BA1
Row Address
A10
A0~A13
A0~A13
Column Address
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
A0-A9, A11, A12
A0-A9, A11
V
NC
V
NC
DQ
V
NC
NC
V
NC
DQ
V
NC
NC
V
DQS
NC
V
V
DM
CK
CK
CKE
NC
A
A
A
A
A
A
A
A
V
SS
SSQ
DDQ
SSQ
DDQ
SSQ
REF
SS
SS
12
11
9
8
7
6
5
4
3
2
V
DQ
V
NC
DQ
V
NC
DQ
V
NC
DQ
V
NC
NC
V
DQS
NC
V
V
DM
CK
CK
CKE
NC
A
A
A
A
A
A
A
A
V
Rev. 1.1 June. 2005
SS
SSQ
DDQ
SSQ
DDQ
SSQ
REF
SS
SS
12
11
9
8
7
6
5
4
7
6
5
4
DDR SDRAM