K4H1G0438M-TLB0 Samsung Semiconductor, K4H1G0438M-TLB0 Datasheet - Page 23

• Manufacturer Part Number: K4H1G0438M-TLB0
• Manufacturer: Samsung Semiconductor
• Type: DDR SDRAMr

Specifications of K4H1G0438M-TLB0

• Organization: 256Mx4
• Density: 1Gb
• Address Bus: 16b
• Access Time (max): 750ps
• Maximum Clock Rate: 266MHz
• Operating Supply Voltage (typ): 2.5V
• Package Type: TSOP-II
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.3V
• Supply Current: 130mA
• Pin Count: 66
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Not Compliant

DDR SDRAM 1Gb M-die (x4, x8)
Figure 4. I/V characteristics for input/output buffers:Pull up(above) and pull down(below)
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Pulldown Characteristics for Weak Output Driver
Pullup Characteristics for Weak Output Driver
1.0
1.0
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Vout(V)
Vout(V)
Rev. 1.1 June. 2005
DDR SDRAM
Maximum
Typical High
Typical Low
Minumum
Typical Low
Typical High
Maximum
Minimum