IS45R16800E-75BLA2 ISSI, Integrated Silicon Solution Inc, IS45R16800E-75BLA2 Datasheet

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... OVERVIEW ISSI 's 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 128Mb SDRAM is organized as follows. IS42/45R81600E Banks 54-pin TSOPII KEY TIMING PARAMETERS Parameter Clk Cycle Time ...

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... All signals are registered on the positive edge of the clock signal, CLK. All inputs and outputs are LVTTL compatible. The 128Mb SDRAM has the ability to synchronously burst data at a high data rate with automatic column-address generation, the ability to interleave between internal banks ...

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IS42/45R81600E, IS42/45R16800E PIN CONFIGURATIONS 54 pin TSOP - Type II for x8 PIN DESCRIPTIONS A0-A11 Row Address Input A0-A9 Column Address Input BA0, BA1 Bank Select Address DQ0 to DQ7 Data I/O CLK System Clock Input CKE Clock Enable Chip ...

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IS42/45R81600E, IS42/45R16800E PIN CONFIGURATIONS 54 pin TSOP - Type II for x16 PIN DESCRIPTIONS A0-A11 Row Address Input A0-A8 Column Address Input BA0, BA1 Bank Select Address DQ0 to DQ15 Data I/O CLK System Clock Input CKE Clock Enable CS ...

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IS42/45R81600E, IS42/45R16800E PIN CONFIGURATION 54-ball TF-BGA for x16 (Top View) (8. 8.00 mm Body, 0.8 mm Ball Pitch) PACKAGE CODE: 54B (8x8 PIN DESCRIPTIONS A0-A11 Row Address Input A0-A8 ...

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... HIGH, disabled. The outputs go to the HIGH impedance state whenDQML/DQMH is HIGH. This function corresponds conventional DRAMs. In write mode,DQML and DQMH control the input buffer. When DQML or DQMH is LOW, the corresponding buffer byte is enabled, and data can be written to the device ...

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IS42/45R81600E, IS42/45R16800E GENERAL DESCRIPTION READ The READ command selects the bank from BA0, BA1 inputs and starts a burst read access to an active row. Inputs A0- A9 (x8); A0-A8 (x16) provides the starting column location. When A10 is HIGH, ...

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IS42/45R81600E, IS42/45R16800E COMMAND TRUTH TABLE CKE Function n – 1 Device deselect (DESL operation (NOP) H Burst stop (BST) H Read H Read with auto precharge H Write H Write with auto precharge H Bank activate (ACT) H ...

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IS42/45R81600E, IS42/45R16800E CKE TRUTH TABLE Current State /Function Activating Clock suspend mode entry Any Clock suspend mode Clock suspend mode exit Auto refresh command Idle (REF) Self refresh entry Idle (SELF) Power down entry Idle Self refresh exit Power down ...

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IS42/45R81600E, IS42/45R16800E FUNCTIONAL TRUTH TABLE Current State CS RAS CAS Idle Row Active ...

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IS42/45R81600E, IS42/45R16800E FUNCTIONAL TRUTH TABLE Continued: Current State CS RAS CAS Read with auto H × × Precharging ...

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IS42/45R81600E, IS42/45R16800E FUNCTIONAL TRUTH TABLE Continued: Current State CS RAS CAS Write Recovering H × × ...

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IS42/45R81600E, IS42/45R16800E CKE RELATED COMMAND TRUTH TABLE Current State Operation Self-Refresh (S.R.) INVALID, CLK ( would exit S.R. Self-Refresh Recovery Self-Refresh Recovery Illegal Illegal Maintain S.R. Self-Refresh Recovery Idle After t rc Idle After t rc Illegal Illegal ...

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IS42/45R81600E, IS42/45R16800E STATE DIAGRAM Mode Register Set Write CKE WRITE WRITE SUSPEND CKE CKE WRITEA WRITEA SUSPEND CKE Precharge POWER ON 14 SELF SELF exit MRS IDLE CKE CKE ACT CKE Row Active CKE BST BST Read Write Read Write ...

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IS42/45R81600E, IS42/45R16800E ABSOLUTE MAXIMUM RATINGS Symbol Parameters V Maximum Supply Voltage dd max V Maximum Supply Voltage for Output Buffer ddq max V Input Voltage in V Output Voltage out P Allowable Power Dissipation d max I output Shorted Current ...

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IS42/45R81600E, IS42/45R16800E DC ELECTRICAL CHARACTERISTICS 1 Symbol Parameter i Operating Current (1) dd1 i Precharge Standby Current dd2p (In Power-Down Mode) i Precharge Standby Current dd2ps with clock stop (In Power-Down Mode) i Precharge Standby Current (2) dd2n (In Non ...

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IS42/45R81600E, IS42/45R16800E AC ELECTRICAL CHARACTERISTICS Symbol Parameter t Clock Cycle Time ck3 t ck2 t Access Time From CLK ac3 t ac2 t CLK HIGH Level Width chi t CLK LOW Level Width cl t Output Data Hold Time oh3 ...

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IS42/45R81600E, IS42/45R16800E OPERATING FREQUENCY / LATENCY RELATIONSHIPS SYMBOL PARAMETER — Clock Cycle Time — Operating Frequency (CAS Latency = 3) t CAS Latency cac t Active Command To Read/Write Command Delay Time rcd t RAS Latency ( ...

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IS42/45R81600E, IS42/45R16800E AC TEST CONDITIONS Input Load t CHI 2.5V 1.25V CLK 2.5V INPUT 1.25V OUTPUT 1.25V AC TEST CONDITIONS Parameter AC Input Levels Input Rise and Fall Times Input Timing Reference ...

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... Initialization SDRAMs must be powered up and initialized in a predefined manner. The 128M SDRAM is initialized after the power is applied to V and V (simultaneously) and the clock is stable dd ddq with DQM High and CKE High. ...

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IS42/45R81600E, IS42/45R16800E INITIALIzE AND LOAD MODE REGISTER CLK CKS CKH CKE CMH CMS CMH CMS COMMAND NOP PRECHARGE DQM/ DQML, DQMH A0-A9, A11 ALL BANKS A10 SINGLE BANK BA0, BA1 ...

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IS42/45R81600E, IS42/45R16800E AUTO-REFRESH CYCLE T0 t CLK CKS CKH CKE t t CMS CMH COMMAND PRECHARGE NOP DQM/ DQML, DQMH A0-A9, A11 ALL BANKS A10 SINGLE BANK BA0, BA1 BANK ( High-Z ...

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IS42/45R81600E, IS42/45R16800E SELF-REFRESH CYCLE T0 t CLK CKS CKH CKE t t CMS CMH COMMAND PRECHARGE DQM/ DQML, DQMH A0-A9, A11 ALL BANKS A10 SINGLE BANK BA0, BA1 BANK High-Z DQ Precharge all ...

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... IS42/45R81600E, IS42/45R16800E REGISTER DEFINITION Mode Register The mode register is used to define the specific mode of operation of the SDRAM. This definition includes the selection of a burst length, a burst type, a CAS latency, an operating mode and a write burst mode, as shown in MODE REGISTER DEFINITION. The mode register is programmed via the LOAD MODE REGISTER command and will retain the stored information until it is programmed again or the device loses power ...

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... IS42/45R81600E, IS42/45R16800E BURST LENGTH Read and write accesses to the SDRAM are burst oriented, with the burst length being programmable, as shown in MODE REGISTER DEFINITION. The burst length deter- mines the maximum number of column locations that can be accessed for a given READ or WRITE command. Burst ...

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IS42/45R81600E, IS42/45R16800E CAS Latency The CAS latency is the delay, in clock cycles, between the registration of a READ command and the availability of the first piece of output data. The latency can be set to two or three clocks. ...

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... CHIP OPERATION BANK/ROW ACTIVATION Before any READ or WRITE commands can be issued to a bank within the SDRAM, a row in that bank must be “opened.” This is accomplished via the ACTIVE command, which selects both the bank and the row to be activated (see Activating Specific Row Within Specific Bank). ...

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... READ burst, provided that I/O contention can be avoided given system design, there may be a pos- sibility that the device driving the input data will go Low-Z before the SDRAM DQs go High-Z. In this case, at least a single-cycle delay should occur between the last read data and the WRITE command. ...

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IS42/45R81600E, IS42/45R16800E minus one. This is shown in the READ to PRECHARGE diagram for each possible CAS latency; data element either the last of a burst of four or the last desired of a longer burst. ...

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IS42/45R81600E, IS42/45R16800E RW1 - READ to WRITE T0 CLK DQM COMMAND READ BANK, ADDRESS COL n DQ CAS Latency - 2 RW2 - READ to WRITE T0 CLK DQM COMMAND READ BANK, ADDRESS COL ...

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IS42/45R81600E, IS42/45R16800E CONSECUTIVE READ BURSTS T0 CLK COMMAND READ BANK, ADDRESS COL n DQ CAS Latency - CLK COMMAND READ NOP BANK, ADDRESS COL n DQ CAS Latency - 3 Integrated Silicon Solution, Inc. — www.issi.com Rev. ...

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IS42/45R81600E, IS42/45R16800E RANDOM READ ACCESSES T0 CLK COMMAND READ BANK, ADDRESS COL CLK COMMAND READ BANK, ADDRESS COL n DQ CAS Latency - READ READ READ BANK, BANK, BANK, COL b COL ...

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IS42/45R81600E, IS42/45R16800E READ BURST TERMINATION T0 CLK COMMAND READ BANK a, ADDRESS COL n DQ CAS Latency - CLK COMMAND READ NOP BANK, ADDRESS COL n DQ CAS Latency - 3 Integrated Silicon Solution, Inc. — www.issi.com ...

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IS42/45R81600E, IS42/45R16800E ALTERNATING BANK READ ACCESSES CLK CKS CKH CKE t t CMS CMH COMMAND ACTIVE NOP DQM/ DQML, DQMH A0-A9, A11 ROW ENABLE AUTO PRECHARGE ...

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IS42/45R81600E, IS42/45R16800E READ - FULL-PAGE BURST CLK CKS CKH CKE t t CMS CMH COMMAND ACTIVE NOP t CMS DQM/ DQML, DQMH A0-A9, A11 ROW COLUMN m t ...

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IS42/45R81600E, IS42/45R16800E READ - DQM OPERATION CLK CKS CKH CKE t t CMS CMH COMMAND ACTIVE NOP DQM/ DQML, DQMH A0-A9, A11 ROW ENABLE AUTO PRECHARGE ...

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IS42/45R81600E, IS42/45R16800E READ to PRECHARGE T0 T1 CLK COMMAND READ NOP BANK a, ADDRESS COL n DQ CAS Latency - CLK COMMAND READ NOP BANK, ADDRESS COL n DQ CAS Latency - 3 Integrated Silicon Solution, Inc. ...

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... An example is shown in WRITE to WRITE diagram. Data either the last of a burst of two or the last desired of a longer burst. The 128Mb SDRAM uses a pipelined architecture and therefore does not require the 2n rule as- sociated with a prefetch architecture. A WRITE command can be initiated on any clock cycle following a previous WRITE command ...

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IS42/45R81600E, IS42/45R16800E WRITE BURST COMMAND ADDRESS WRITE TO WRITE RANDOM WRITE CYCLES COMMAND ADDRESS Integrated Silicon Solution, Inc. — www.issi.com Rev. A 04/15/2010 CLK WRITE NOP NOP BANK, COL n ...

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IS42/45R81600E, IS42/45R16800E WRITE to READ T0 CLK COMMAND WRITE BANK, ADDRESS COL WP1 - WRITE to PRECHARGE T0 CLK DQM COMMAND WRITE BANK a, ADDRESS COL ...

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IS42/45R81600E, IS42/45R16800E WP2 - WRITE to PRECHARGE T0 CLK DQM COMMAND WRITE BANK a, ADDRESS COL WRITE Burst Termination COMMAND ADDRESS Integrated Silicon Solution, Inc. — www.issi.com Rev. A 04/15/2010 NOP ...

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IS42/45R81600E, IS42/45R16800E WRITE - FULL PAGE BURST CLK CKS CKH CKE t t CMS CMH COMMAND ACTIVE NOP DQM/DQML DQMH A0-A9, A11 ROW A10 ROW t ...

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IS42/45R81600E, IS42/45R16800E WRITE - DQM OPERATION CLK CKS CKH CKE t t CMS CMH COMMAND ACTIVE NOP DQM/DQML DQMH A0-A9, A11 ROW A10 ROW t t ...

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IS42/45R81600E, IS42/45R16800E ALTERNATING BANK WRITE ACCESSES CLK CKS CKH CKE t t CMS CMH COMMAND ACTIVE NOP WRITE t CMS DQM/DQML DQMH A0-A9, A11 ROW COLUMN m ...

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IS42/45R81600E, IS42/45R16800E CLOCK SUSPEND Clock suspend mode occurs when a column access/burst is in progress and CKE is registered LOW. In the clock suspend mode, the internal clock is deactivated, “freezing” the synchronous logic. For each positive clock edge on ...

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IS42/45R81600E, IS42/45R16800E CLOCK SUSPEND MODE CLK CKS CKH CKS CKE t t CMS CMH COMMAND READ NOP t t CMS CMH DQM/DQML DQMH A0-A9, A11 COLUMN m ...

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IS42/45R81600E, IS42/45R16800E PRECHARGE The PRECHARGE command (see figure) is used to deac- tivate the open row in a particular bank or the open row in all banks.The bank(s) will be available for a subsequent row access some specified time (t ...

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IS42/45R81600E, IS42/45R16800E POWER-DOWN MODE CYCLE T0 CLK t t CKS CKH CKE t t CMS CMH COMMAND PRECHARGE DQM/DQML DQMH A0-A9, A11 ALL BANKS A10 SINGLE BANK BA0, BA1 BANK High-Z DQ Two clock cycles All ...

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... CONCURRENT AUTO PRECHARGE An access command (READ or WRITE) to another bank while an access command with auto precharge enabled is executing is not allowed by SDRAMs, unless the SDRAM supports CONCURRENT AUTO PRECHARGE. ISSI READ With Auto Precharge interrupted by a READ T0 T1 ...

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IS42/45R81600E, IS42/45R16800E WRITE with Auto Precharge 3. Interrupted by a READ (with or without auto precharge): A READ to bank m will interrupt a WRITE on bank n when registered, with the data-out appearing (CAS latency) later. The PRECHARGE to ...

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IS42/45R81600E, IS42/45R16800E SINGLE READ WITH AUTO PRECHARGE CLK CKS CKH CKE t t CMS CMH COMMAND ACTIVE NOP DQM/DQML DQMH A0-A9, A11 ROW A10 ROW t ...

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IS42/45R81600E, IS42/45R16800E READ WITH AUTO PRECHARGE CLK CKS CKH CKE t t CMS CMH COMMAND ACTIVE NOP t CMS DQM/DQML DQMH A0-A9, A11 ROW COLUMN ...

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IS42/45R81600E, IS42/45R16800E SINGLE READ WITHOUT AUTO PRECHARGE CLK CKS CKH CKE t t CMS CMH COMMAND ACTIVE NOP DQM/DQML DQMH A0-A9, A11 ROW A10 ROW t ...

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IS42/45R81600E, IS42/45R16800E READ WITHOUT AUTO PRECHARGE CLK CKS CKH CKE t t CMS CMH COMMAND ACTIVE NOP t CMS DQM/DQML DQMH A0-A9, A11 ROW COLUMN ...

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IS42/45R81600E, IS42/45R16800E SINGLE WRITE WITH AUTO PRECHARGE CLK t t CKS CKH CKE t t CMS CMH ACTIVE NOP COMMAND DQM/DQML, DQMH A0-A9, A11 ROW A10 ROW t ...

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IS42/45R81600E, IS42/45R16800E SINGLE WRITE - WITHOUT AUTO PRECHARGE CLK CKS CKH CKE t t CMS CMH COMMAND ACTIVE NOP t DQM/DQML DQMH A0-A9, A11 ROW DISABLE ...

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IS42/45R81600E, IS42/45R16800E WRITE - WITHOUT AUTO PRECHARGE CLK CKS CKH CKE t t CMS CMH COMMAND ACTIVE NOP t DQM/DQML DQMH A0-A9, A11 ROW A10 ROW ...

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IS42/45R81600E, IS42/45R16800E WRITE - WITH AUTO PRECHARGE CLK CKS CKH CKE t t CMS CMH COMMAND ACTIVE NOP WRITE t CMS DQM/DQML DQMH A0-A9, A11 ROW COLUMN ...

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... IS45R16800E-8BLA1 Automotive Range A2: -40°C to +105°C Frequency Speed (ns) Order Part No. 133 MHz 7.5 IS45R16800E-75BLA2 125 MHz 8 IS45R16800E-8BLA2 Notes: 1. Contact Product Marketing for Leaded parts support. 2. Part numbers with "L" are leadfree, and RoHS compliant. Integrated Silicon Solution, Inc. — www.issi.com Rev ...

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IS42/45R81600E, IS42/45R16800E 60 Integrated Silicon Solution, Inc. — www.issi.com Rev. A 04/15/2010 ...

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IS42/45R81600E, IS42/45R16800E Integrated Silicon Solution, Inc. — www.issi.com Rev. A 04/15/2010 61 ...