MT41J256M4JP-15E:G Micron Technology Inc, MT41J256M4JP-15E:G Datasheet - Page 156

• Manufacturer Part Number: MT41J256M4JP-15E:G
• Description: IC DDR3 SDRAM 1GBIT 78FBGA
• Manufacturer: Micron Technology Inc
• Series: -r

Specifications of MT41J256M4JP-15E:G

• Format - Memory: RAM
• Memory Type: DDR3 SDRAM
• Memory Size: 1G (256M x 4)
• Speed: 667MHz
• Interface: Parallel
• Voltage - Supply: 1.425 V ~ 1.575 V
• Operating Temperature: 0°C ~ 95°C
• Package / Case: 78-TFBGA
• Lead Free Status / RoHS Status: Supplier Unconfirmed

Figure 71: Nonconsecutive READ Bursts
DQS, DQS#
Figure 72: READ (BL8) to WRITE (BL8)
Command 1
DQS, DQS#
Command
Address 2
Address
CK#
DQ
DQ 3
CK
CK#
CK
Bank a,
READ
Col n
T0
READ
Bank,
Col n
T0
NOP
T1
NOP
T1
READ-to-WRITE command delay = RL + t CCD + 2 t CK - WL
Notes:
Notes:
NOP
T2
NOP
T2
RL = 5
1. AL = 0, RL = 8.
2. DO n (or b) = data-out from column n (or column b).
3. Seven subsequent elements of data-out appear in the programmed order following DO n.
4. Seven subsequent elements of data-out appear in the programmed order following DO b.
1. NOP commands are shown for ease of illustration; other commands may be valid at these times.
2. The BL8 setting is activated by either MR0[1:0] = 00 or MR0[1:0] = 01 and A12 = 1 during the READ command at
3. DO n = data-out from column, DI b = data-in for column b.
4. BL8, RL = 5 (AL = 0, CL = 5), WL = 5 (AL = 0, CWL = 5).
NOP
T3
T0, and the WRITE command at T6.
NOP
T3
CL = 8
T4
NOP
NOP
T4
t RPRE
Bank a,
READ
Col b
T5
NOP
T5
DO
n
T6
NOP
n + 1
DO
WRITE
Bank,
Col b
T6
n + 2
DO
NOP
T7
n + 3
DO
NOP
T7
n + 4
DO
NOP
T8
DO
n
n + 5
DO
NOP
T8
CL = 8
n + 6
DO
NOP
T9
WL = 5
t RPST
n + 7
DO
NOP
T9
T10
NOP
NOP
T10
NOP
T11
t WPRE
NOP
T11
DI
T12
NOP
n
n + 1
DI
NOP
NOP
T12
n + 2
T13
DI
DO
b
n + 3
t BL = 4 clocks
DI
Transitioning Data
NOP
T14
NOP
T13
n + 4
DI
n + 5
DI
T15
NOP
NOP
n + 6
T14
DI
Transitioning Data
n + 7
DI
t WPST
Don’t Care
NOP
T16
NOP
T15
t WTR
t WR
NOP
Don’t Care
T17