MT48LC4M16A2B4-75:G Micron Technology Inc, MT48LC4M16A2B4-75:G Datasheet - Page 57

MT48LC4M16A2B4-75:G

Manufacturer Part Number
MT48LC4M16A2B4-75:G
Description
Manufacturer
Micron Technology Inc
Type
SDRAMr
Datasheet

Specifications of MT48LC4M16A2B4-75:G

Organization
4Mx16
Density
64Mb
Address Bus
14b
Access Time (max)
6/5.4ns
Maximum Clock Rate
133MHz
Operating Supply Voltage (typ)
3.3V
Package Type
VFBGA
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Supply Current
140mA
Pin Count
54
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Compliant

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Figure 40:
PDF: 09005aef80725c0b/Source: 09005aef806fc13c
64MSDRAM_2.fm - Rev. N 12/08 EN
DQML, DQMH
A0–A9, A11
COMMAND
BA0, BA1
DQM /
CKE
A10
CLK
DQ
t CMS
t CKS
t AS
t AS
t AS
READ – Without Auto Precharge
ACTIVE
ROW
ROW
BANK
T0
t CMH
t CKH
t AH
t AH
t AH
Notes:
t RCD
t RAS
t RC
t CK
T1
NOP
1. For this example, BL = 4, CL = 2, and the READ burst is followed by a “manual”
2. x16: A8, A9 and A11 = “Don’t Care”
DISABLE AUTO PRECHARGE
PRECHARGE.
x8: A9 and A11 = “Don’t Care”
x4: A11 = “Don’t Care”
t CMS
t CL
COLUMN m
BANK
T2
READ
t CMH
t CH
CAS Latency
2
T3
NOP
t LZ
t AC
57
T4
D
NOP
OUT
t OH
t AC
m
Micron Technology, Inc., reserves the right to change products or specifications without notice.
D
T5
OUT
NOP
t OH
m+1
t AC
SINGLE BANKS
ALL BANKS
PRECHARGE
BANK(S)
D
T6
OUT
t OH
64Mb: x4, x8, x16 SDRAM
m+2
t RP
t AC
©2000 Micron Technology, Inc. All rights reserved.
D
T7
NOP
OUT
t OH
m+3
Timing Diagrams
t HZ
BANK
ACTIVE
ROW
ROW
T8
DON’T CARE
UNDEFINED

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