MT48LC16M16A2BG-7E IT:D Micron Technology Inc, MT48LC16M16A2BG-7E IT:D Datasheet - Page 68
MT48LC16M16A2BG-7E IT:D
Manufacturer Part Number
MT48LC16M16A2BG-7E IT:D
Description
Manufacturer
Micron Technology Inc
Type
SDRAMr
Datasheet
1.MT48LC16M16A2BG-7E_ITD.pdf
(92 pages)
Specifications of MT48LC16M16A2BG-7E IT:D
Organization
16Mx16
Density
256Mb
Address Bus
15b
Access Time (max)
5.4ns
Maximum Clock Rate
143MHz
Operating Supply Voltage (typ)
3.3V
Package Type
VFBGA
Operating Temp Range
-40C to 85C
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Supply Current
135mA
Pin Count
54
Mounting
Surface Mount
Operating Temperature Classification
Industrial
Lead Free Status / RoHS Status
Compliant
- Current page: 68 of 92
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Figure 38: WRITE – DQM Operation
Burst Read/Single Write
PDF: 09005aef8091e6d1
256Mb_sdr.pdf - Rev. N 1/10 EN
Command
BA0, BA1
Address
DQM
CKE
CLK
A10
DQ
t CMS
t CKS
t AS
t AS
t AS
ACTIVE
Bank
T0
Row
Row
t CKH
t CMH
t AH
t AH
t AH
Note:
t RCD
t CK
The burst read/single write mode is entered by programming the write burst mode bit
(M9) in the mode register to a 1. In this mode, all WRITE commands result in the access
of a single column location (burst of one), regardless of the programmed burst length.
READ commands access columns according to the programmed burst length and se-
quence, just as in the normal mode of operation (M9 = 0).
T1
NOP
1. For this example, BL = 4.
Disable auto precharge
Enable auto precharge
t CMS
t CL
t DS
Column m
WRITE
T2
Bank
D
t CMH
IN
t DH
t CH
T3
NOP
68
t DS
T4
NOP
Micron Technology, Inc. reserves the right to change products or specifications without notice.
D
IN
t DH
t DS
256Mb: x4, x8, x16 SDRAM
T5
NOP
D
IN
t DH
© 1999 Micron Technology, Inc. All rights reserved.
NOP
T6
WRITE Operation
NOP
T7
Don’t Care
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