RD28F1604C3B110 Intel, RD28F1604C3B110 Datasheet - Page 74

• Manufacturer Part Number: RD28F1604C3B110
• Manufacturer: Intel

Specifications of RD28F1604C3B110

• Operating Supply Voltage (max): 3.3V
• Operating Temperature (max): 85C
• Mounting: Surface Mount
• Lead Free Status / RoHS Status: Not Compliant

C3 SCSP Flash Memory
Appendix H Ordering Information
.
Table 38.
Table 39.
26 Aug 2005
74
Ordering Information for Product Combinations with 0.25 µm to 0.13 µm Flash
Ordering Information for Combinations specific to 32M 0.13 µm Flash
Package
PF = Lead-Free Ball Stacked-CSP
Product Line Designator
Flash Density
320 = x16 (32 Mbit)
160 = x16 (16 Mbit)
SRAM Device Density
8 = x16 (8 Mbit)
4 = x16 (4 Mbit)
2 = x16 (2 Mbit)
Package
Product Line Designator
Density
Product Family
RD = Leaded Ball Stacked -CSP
28F or 38F = Intel
RD = Leaded Ball Stacked-CSP
PF = Lead-Free Ball Stacked-CSP
38F = Intel
Flash #1 = 1 = 32 Mbit
Flash #2 = 0 = No Die
Flash #3 = 1 = 4 Mbit SRAM
Flash #4 = 0 = No Die
C = Advanced+ Boot Block Flash Memory
Intel
= 2 = 8 Mbit SRAM
®
®
Advanced+ Boot Block Flash Memory (C3) SCSP Family
Flash Stacked Memory
®
R D 2 8 F 1 6 0 2 C 3 T D 7 0
R D 3 8 F 1 0 1 0 C 0 Z T L 0
Flash Memory
Order Number: 252636, Revision: 004
16 Mbit = 70, 90, or 110 ns
32 Mbit = 70 or 90 ns
Product Family
C = Advanced+ Boot Block
Technology
Differentiator
D = 0.13µm
<blank> = 0.25µm or
0.18µm (refer to access
speed for differientation)
Parameter Location
T = Top Blocking
B = Bottom Blocking
Access Speed (ns)
0 = Original Version of
this product:
Flash Speed = 70 ns
Flash Process = 0.13 µm
Vccq = 2.7 V to 3.3 V
Z = 3.0 V I/O
Device Details
Pinout Indicator
L = 72 ball "I"-ballout
Parameter Location
T = Top Blocking
B = Bottom Blocking
Voltage
Flash Memory
Datasheet