RD28F1604C3B110 Intel, RD28F1604C3B110 Datasheet - Page 14

no-image

RD28F1604C3B110

Manufacturer Part Number
RD28F1604C3B110
Description
Manufacturer
Intel
Datasheet

Specifications of RD28F1604C3B110

Operating Supply Voltage (max)
3.3V
Operating Temperature (max)
85C
Mounting
Surface Mount
Lead Free Status / RoHS Status
Not Compliant
C3 SCSP Flash Memory
3.0
3.1
3.2
26 Aug 2005
14
Flash Memory Modes of Operation
The flash memory has four read modes:
The write modes are:
Three additional modes are available only during suspended operations:
These modes are reached using the commands summarized in
Definitions” on page
Read Array (FFh)
When F-RP# transitions from V
mode and responds to the read control inputs without additional CUI commands.
In addition, the address of the desired location must be applied to the address balls. If the flash
memory device is not in read array mode, such as after a program or erase operation, the Read
Array command (FFh) must be written to the CUI before array reads can take place.
Read Identifier (90h)
The Read Configuration mode outputs three types of information:
1. To switch the flash memory device to this mode, write the read configuration command (90h).
2. To return to read array mode, write the Read Array command (FFh).
Read array
Read configuration
Read status
CFI query
Program
Erase
Erase suspend to program
Erase suspend to read
Program suspend to read
Manufacturer/device identifier
Block locking status
Protection register
In this mode, read cycles from addresses shown in
page 15
Intel
®
retrieve the specified information.
Advanced+ Boot Block Flash Memory (C3) SCSP Family
Order Number: 252636, Revision: 004
19.
IL
(reset) to V
IH
, the flash memory device defaults to read array
Table 4 “Read Configuration Table” on
Table 5 “Flash Memory Command
Datasheet

Related parts for RD28F1604C3B110