RD38F2030W0ZBQ1 Micron Technology Inc, RD38F2030W0ZBQ1 Datasheet - Page 28
RD38F2030W0ZBQ1
Manufacturer Part Number
RD38F2030W0ZBQ1
Description
Manufacturer
Micron Technology Inc
Datasheet
1.RD38F2030W0ZBQ1.pdf
(52 pages)
Specifications of RD38F2030W0ZBQ1
Operating Supply Voltage (max)
1.95V
Operating Temperature (max)
85C
Mounting
Surface Mount
Lead Free Status / RoHS Status
Not Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
RD38F2030W0ZBQ1
Manufacturer:
TI
Quantity:
4 133
Part Number:
RD38F2030W0ZBQ1
Manufacturer:
INTEL
Quantity:
20 000
Intel® Wireless Flash Memory (W18/W30 SCSP)
Figure 9.
7.4
Figure 10.
Figure 11.
June 2005
28
R-UB#, R-LB#
ADDRESSES
R-WE#
P-CS#
DAT A
AC Waveform PSRAM Write Operation
Device AC Test Conditions
Transient Input/Output Reference Waveform
Transient Equivalent Testing Load Circuit
Note:
Notes:
1.
2.
V
CCQ
, P-V
AC test inputs are driven to V
ends at V
V
Test configuration component value for worst case specification conditions.
C
0 V
CC
L
CC
includes jig capacitance.
Input
= V
Output
Intel® Wireless Flash Memory (W18/W30 SCSP)
CCMin
CCQ
I/O
/2, P-V
.
Order Number: 251407, Revision: 009
P-V
V
CCQ
W2
CC
/2,
/2
CC
/2. Input rise and fall time (10% to 90%) < 5 ns. Worse case speed occurs at
CCQ
, P-V
Z
CC
O
= 50 Ohms
for logic “1” and 0.0 V for logic “0”. input/output timing begins/
W5
Test Points
W1
W1
W6
W9
W3
W3
P-V
W4
CC
/2 = V
Data In
Ohms
50
CCQ
/2
C
W8
L
= 30 pf
P-V
V
CCQ
W7
CC
/2,
/2
Datasheet
Output