RD38F2020W0YTQ0 Micron Technology Inc, RD38F2020W0YTQ0 Datasheet - Page 20

• Manufacturer Part Number: RD38F2020W0YTQ0
• Manufacturer: Micron Technology Inc

Specifications of RD38F2020W0YTQ0

• Operating Supply Voltage (max): 1.95V
• Operating Temperature (max): 85C
• Mounting: Surface Mount
• Lead Free Status / RoHS Status: Not Compliant

Intel® Wireless Flash Memory (W18/W30 SCSP)
Table 3.
June 2005
20
Notes:
1.
2.
3.
Parameter
I
V
V
V
I
V
I
CC2
I
V
I
I
CC
OH
I
SB
OL
OL
CC
OH
OL
IL
IH
IL
Input Leakage currents include Hi-Z output leakage for bi-directional buffers with tri-state outputs.
All currents are in RMS unless noted otherwise.
Applicable to 38F2020W0ZTQ1, 38F2020W0ZBQ1, 38F2030W0YTQ1, 38F2030W0YBQ1, 38F2030W0ZTQ2,
38F2030W0ZBQ2, 38F1030W0ZTQ0, 38F1030W0ZBQ0, 38F1030W0YTQE, 38F1030W0YBQE.
Voltage Range
Operating Current
at min cycle time
Operating Current
at max cycle time
(1 µs)
Standby Current
Output HIGH
Voltage
Output LOW
Voltage
Input HIGH
Voltage
Input LOW Voltage
Output HIGH
Current
Output LOW
Current
Input Leakage
Current
Output Leakage
Current
Description
PSRAM DC Characteristics
Intel® Wireless Flash Memory (W18/W30 SCSP)
-0.2 < V
-0.2 < V
P-CS# ≥ P-V
All inputs stable
(either high or
I
OL
I
I
IO
IO
Test Conditions
Order Number: 251407, Revision: 009
= 0.1 mA, V
I
0.2V.
P-V
= 0 mA
= 0 mA
low)
OH
IN
IN
= -0.1 mA
< P-V
< P-V
CC
= V
CC
CC
CC
-
DR
CCMin
+ 0.2 V
+ 0.2 V
16M
16M
16M
8M
8M
8M
P-V
–0.2
Min
-0.1
1.8
1.4
CC
-1
-1
–
–
–
–
–
–
–
–
1.8 V PSRAM
-0.3
P-V
Max
1.95
100
CC
0.2
0.4
30
+1
+1
–
–
5
–
–
–
–
+0.2
P-V
P-V
Min
-0.1
-0.2
2.7
0.3
0.4
3.0 V PSRAM
-1
-1
–
–
–
–
–
–
–
–
CC
CC
-
-
P-V
Max
100
3.1
0.3
0.2
0.6
30
35
80
+1
+1
5
7
–
–
–
CC
+
Unit
mA
mA
mA
mA
µA
µA
µA
V
V
V
V
V
Datasheet
1, 2, 3
1, 2, 3
Note
2, 3
2, 3
2, 3
2, 3
2, 3
3
3
3
3
3