TC1301B-FAAVMFTR Microchip Technology, TC1301B-FAAVMFTR Datasheet - Page 18

• Manufacturer Part Number: TC1301B-FAAVMFTR
• Description: Dual CMOS LDO 300mA & 150mA W Per Channel Shutdown, Bypass & Independent Delayed
• Manufacturer: Microchip Technology

Specifications of TC1301B-FAAVMFTR

• Regulator Topology: Positive Fixed
• Voltage - Output: 2.8V, 3.3V, 2.63V (Reset)
• Voltage - Input: 2.7 ~ 6 V
• Voltage - Dropout (typical): 0.104V @ 300mA, 0.15V @ 150mA
• Number Of Regulators: 2
• Current - Output: 300mA (Min), 150mA (Min)
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 8-DFN
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Limit (min): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Contains lead / RoHS non-compliant

TC1301A/B
EQUATION 6-3:
The maximum power dissipation capability for a
package can be calculated given the junction to
ambient thermal resistance and the maximum ambient
temperature for the application. The following equation
can be used to determine the package maximum
internal power dissipation.
EQUATION 6-4:
EQUATION 6-5:
EQUATION 6-6:
DS21798C-page 18
Where:
Where:
Where:
Where:
T
P
T
J(MAX)
TOTAL
P
P
T
T
AMAX
T
Rθ
D(MAX)
D(MAX)
T
J(RISE)
J(RISE)
J(MAX)
AMAX
Rθ
Rθ
JA
T
T
JA
JA
T
A
J
J MAX
P
(
=
=
=
=
D MAX
T
(
=
=
=
=
=
=
=
=
=
=
J RISE
(
Maximum continuous junction tem-
perature
Total device power dissipation
Thermal resistance from junction-
to-ambient
Maximum ambient temperature
)
T
=
Maximum device power
dissipation
Maximum continuous junction
temperature
Maximum ambient temperature
Thermal resistance from junction-
to-ambient
Rise in device junction
temperature over the ambient
temperature
Maximum device power
dissipation
Thermal resistance from junction-
to-ambient
Junction Temperature
Rise in device junction
temperature over the ambient
temperature
Ambient Temperature
)
J
=
P
)
=
TOTAL
=
(
---------------------------------------------------
T
T
J RISE
P
J MAX
(
(
D MAX
(
×
Rθ
Rθ
)
)
+
–
)
JA
JA
×
T
T
A
A MAX
Rθ
+
(
T
JA
AMAX
)
)
6.3
Internal power dissipation, junction temperature rise,
junction temperature, and maximum power dissipation
are calculated in the following example. The power
dissipation as a result of ground current is small
enough to be neglected.
6.3.1
Device Junction Temperature Rise
The internal junction temperature rise is a function of
internal power dissipation and the thermal resistance
from junction to ambient for the application. The
thermal resistance from junction to ambient (Rθ
derived from an EIA/JEDEC standard for measuring
thermal resistance for small surface-mount packages.
The EIA/JEDEC specification is JESD51-7, “High
Effective Thermal Conductivity Test Board for Leaded
Surface Mount Packages”. The standard describes the
test method and board specifications for measuring the
thermal resistance from junction to ambient. The actual
thermal resistance for a particular application can vary
depending on many factors such as copper area and
thickness. Refer to AN792, “A Method To Determine
How Much Power a SOT-23 Can Dissipate in Your
Application” (DS00792), for more information regarding
this subject.
Package
Input Voltage
LDO Output Voltages and Currents
Maximum Ambient Temperature
Internal Power Dissipation
Internal power dissipation is the sum of the power
dissipation for each LDO pass device.
Package Type = 3x3 DFN8
P
T
T
T
J(RISE)
LDO1(MAX)
JRISE
JRISE
Typical Application
T
P
P
V
V
A(MAX)
P
P
P
P
TOTAL
I
I
TOTAL
POWER DISSIPATION EXAMPLE
OUT1
OUT1
OUT2
OUT2
LDO1
LDO1
LDO2
LDO2
V
= P
= 807.8 milliWatts x 41.0
= 33.1
IN
= 2.7V to 4.2V
= 2.8V
= 300 mA
= 1.8V
= 150 mA
= 50°C
= (V
= (4.2V - (0.975 x 2.8V)) x 300 mA
= 441.0 milliWatts
= (4.2V - (0.975 X 1.8V)) x 150 mA
= 366.8 milliWatts
= P
= 807.8 milliWatts
TOTAL
I
OUT1(MAX)
°
LDO1
C
IN(MAX)
© 2008 Microchip Technology Inc.
x Rq
+ P
JA
- V
LDO2
OUT1(MIN)
°
C/W
) x
JA
) is