TC1301B-FAAVMFTR Microchip Technology, TC1301B-FAAVMFTR Datasheet - Page 17

• Manufacturer Part Number: TC1301B-FAAVMFTR
• Description: Dual CMOS LDO 300mA & 150mA W Per Channel Shutdown, Bypass & Independent Delayed
• Manufacturer: Microchip Technology

Specifications of TC1301B-FAAVMFTR

• Regulator Topology: Positive Fixed
• Voltage - Output: 2.8V, 3.3V, 2.63V (Reset)
• Voltage - Input: 2.7 ~ 6 V
• Voltage - Dropout (typical): 0.104V @ 300mA, 0.15V @ 150mA
• Number Of Regulators: 2
• Current - Output: 300mA (Min), 150mA (Min)
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 8-DFN
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Limit (min): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Contains lead / RoHS non-compliant

6.0
6.1
The TC1301A/B is used for applications that require
the integration of two LDO’s and a microcontroller
RESET.
FIGURE 6-1:
TC1301A/B.
6.1.1
6.2
6.2.1
The internal power dissipation within the TC1301A/B is
a function of input voltage, output voltage, output
current and quiescent current. The following equation
can be used to calculate the internal power dissipation
for each LDO.
© 2008 Microchip Technology Inc.
C
1 µF Ceramic
X5R
System RESET
C
1 µF Ceramic
X5R
System RESET
OUT1
OUT1
System RESET Load = 10 kΩ
Input Voltage Range = 2.7V to 4.2V
2.8V @ 300 mA
2.8V @ 300 mA
C
10 nF Ceramic
bypass
APPLICATION CIRCUITS/
ISSUES
Typical Application
Power Calculations
Package Type = 3x3 DFN8
V
APPLICATION INPUT CONDITIONS
POWER DISSIPATION
IN
V
maximum = 4.2V
IN
1
2
3
4
1
2
3
4
typical = 3.6V
V
V
RESET
V
GND
Bypass
RESET
V
GND
Bypass
OUT1
OUT2
OUT1
OUT1
TC1301A
TC1301B
Typical Application Circuit
SHDN2
SHDN2
SHDN1
ON/OFF Control V
= 300 mA maximum
= 150 mA maximum
V
V
ON/OFF Control V
V
OUT2
OUT2
DET
V
V
IN
IN
ON/OFF Control V
8
7
6
5
8
7
6
5
1.8V
@ 150 mA
1.8V
@ 150 mA
C
1 µF Ceramic
X5R
C
1 µF Ceramic
X5R
OUT2
OUT2
OUT2
OUT2
OUT1
C
1 µF
C
1 µF
BATTERY
IN
BATTERY
IN
2.7V
4.2V
2.7V
4.2V
to
to
EQUATION 6-1:
In addition to the LDO pass element power dissipation,
there is power dissipation within the TC1301A/B as a
result of quiescent or ground current. The power
dissipation as a result of the ground current can be
calculated using the following equation. The V
quiescent current and the V
considered. The V
quiescent current, while the V
the voltage detector current.
EQUATION 6-2:
The total power dissipated within the TC1301A/B is the
sum of the power dissipated in both of the LDO’s and
the P(I
the typical I
Operating at a maximum of 4.2V results in a power
dissipation of 0.5 milliWatts. For most applications, this
is small compared to the LDO pass device power
dissipation and can be neglected.
The
temperature specified for the TC1301A/B is 125
estimate the internal junction temperature of the
TC1301A/B, the total internal power dissipation is
multiplied by the thermal resistance from junction to
ambient (Rθ
from junction to ambient for the 3x3 DFN8 pin package
is estimated at 41
Where:
Where:
V
V
P
IN(MAX)
P
V
OUT(MIN)
I(GND)
I
LDO
VDET
IN(MAX)
GND
I
maximum
P
VIN
P
LDO
=
I GND
) term. Because of the CMOS construction,
(
JA
(
=
=
=
=
V
GND
) of the device. The thermal resistance
IN MAX )
=
=
=
)
(
=
Total current in ground pin
Maximum input voltage
Current flowing in the V
no output current on either LDO
output
Current in the V
RESET loaded
°
C/W.
for the TC1301A/B is 116 µA.
continuous
LDO Pass device internal power
dissipation
Maximum input voltage
LDO minimum output voltage
V
IN
IN MAX
)
(
–
current is a result of LDO
TC1301A/B
V
OUT MIN
)
DET
×
DET
(
(
I
VIN
DET
pin current are both
operating
current is a result of
)
) I
DS21798C-page 17
+
×
pin with
I
VDET
OUT MAX )
IN
pin with
(
)
junction
°
IN
C
)
.
pin
To