STM32F100RBT6BTR STMicroelectronics, STM32F100RBT6BTR Datasheet - Page 49

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STM32F100RBT6BTR

Manufacturer Part Number
STM32F100RBT6BTR
Description
16/32-BITS MICROS
Manufacturer
STMicroelectronics
Series
STM32r
Datasheet

Specifications of STM32F100RBT6BTR

Core Processor
ARM® Cortex-M3™
Core Size
32-Bit
Speed
24MHz
Connectivity
I²C, IrDA, LIN, SPI, UART/USART
Peripherals
DMA, PDR, POR, PVD, PWM, Temp Sensor, WDT
Number Of I /o
51
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Eeprom Size
-
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
2 V ~ 3.6 V
Data Converters
A/D 16x12b; D/A 2x12b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
64-LQFP
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

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STM32F100x4, STM32F100x6, STM32F100x8, STM32F100xB
5.3.7
Figure 21. Typical application with a 32.768 kHz crystal
Internal clock source characteristics
The parameters given in
temperature and V
High-speed internal (HSI) RC oscillator
Table 23.
1. V
2. Based on characterization, not tested in production.
3. Guaranteed by design. Not tested in production
DuCy
I
t
DD(HSI)
Symbol
ACC
su(HSI)
f
HSI
DD
(HSI)
HSI
Resonator with
integrated capacitors
= 3.3 V, T
(3)
(3)
Frequency
Duty cycle
Accuracy of HSI oscillator
HSI oscillator startup time
HSI oscillator power consumption
HSI oscillator characteristics
A
C L2
= –40 to 105 °C °C unless otherwise specified.
C L1
DD
Parameter
supply voltage conditions summarized in
32.768 KH z
resonator
Table 23
Doc ID 16455 Rev 6
are derived from tests performed under the ambient
OSC32_OU T
OSC32_IN
T
T
T
T
R F
(1)
A
A
A
A
= –40 to 105 °C
= –10 to 85 °C
= 0 to 70 °C
= 25 °C
Conditions
controlled
Bias
gain
(2)
(2)
(2)
STM32F10xxx
Table
Min
-2.4
-2.2
-1.9
Electrical characteristics
45
-1
f LSE
1
8.
Typ
80
8
Max
100
2.5
1.3
1.3
55
1
2
ai14129b
MHz
Unit
49/87
µA
µs
%
%
%
%
%

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