SST25VF064C-80-4C-Q2AE Microchip Technology, SST25VF064C-80-4C-Q2AE Datasheet - Page 23

• Manufacturer Part Number: SST25VF064C-80-4C-Q2AE
• Description: 2.7V To 3.6V 64Mbit SPI Serial Flash 8 TDFN 6x8x0.8mm TRAY
• Manufacturer: Microchip Technology

Specifications of SST25VF064C-80-4C-Q2AE

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 64M (8M x 8)
• Speed: 80MHz
• Interface: SPI Serial
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-WDFN Exposed Pad
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

64 Mbit SPI Serial Dual I/O Flash
SST25VF064C
ELECTRICAL SPECIFICATIONS
Absolute Maximum Stress Ratings Applied conditions greater than those listed under “Absolute Maximum
Stress Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation
of the device at these conditions or conditions greater than those defined in the operational sections of this data
sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.
Temperature Under Bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55°C to +125°C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C
D. C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to V
Transient Voltage (<20 ns) on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -2.0V to V
Package Power Dissipation Capability (T
Surface Mount Solder Reflow Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C for 10 seconds
Output Short Circuit Current
Operating Range
TABLE 10: DC Operating Characteristics
TABLE 11: Capacitance
©2010 Silicon Storage Technology, Inc.
Range
Commercial
Industrial
Symbol
I
I
I
I
I
I
I
V
V
V
V
Parameter
C
C
DDR
DDR2
DDR3
DDW
SB1
LI
LO
IL
IH
OL
OH
OUT
IN
1. Output shorted for no more than one second. No more than one output shorted at a time.
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
1
1
Parameter
Read Current
High-Speed Read Current
Fast-Read Dual-Output/Dual I/O
Current
Program and Erase Current
Standby Current
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
Description
Output Pin Capacitance
Input Capacitance
Ambient Temp
-40°C to +85°C
0°C to +70°C
(T
1
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
= 25°C, f = 1 Mhz, other pins open)
A
= 25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W
2.7-3.6V
2.7-3.6V
V
0.7 V
(VDD = 2.7-3.6V)
V
DD
Min
DD
-0.2
DD
Limits
Max
0.2
0.8
25
20
12
25
25
23
1
1
AC Conditions of Test
Input Rise/Fall Time . . . . . . . . . . . . . . . 5 ns
Output Load . . . . . . . . . . . . . . . . . . . . . C
See Figure 28
Units
mA
mA
mA
mA
µA
µA
µA
V
V
V
V
Test Conditions
CE# = 0.1 V
CE# = 0.1 V
CE# = 0.1 V
CE# = V
CE# = V
V
V
V
V
I
I
OL
OH
IN
OUT
DD
DD
= 100 µA, V
= -100 µA, V
= GND to V
= V
= V
= GND to V
DD
DD
DD
DD
, V
Min
Max
Test Condition
DD
DD
DD
IN
/0.9 V
/0.9 V
/0.9 V
V
DD
DD
V
= V
OUT
DD
DD
IN
, V
= V
DD
, V
= V
= 0V
DD
= 0V
DD
DD
DD
DD
DD
or V
DD
@33 MHz, SO = open
@80 MHz, SO = open
@75/50 MHz
= V
Min
= V
Min
SS
DD
DD
Max
S71392-04-000
Max
L
= 30 pF
Maximum
12 pF
Data Sheet
6 pF
DD
DD
T10.0 1392
T11.0 1392
+0.5V
+2.0V
04/10