S29AS008J70BFI030 Spansion Inc., S29AS008J70BFI030 Datasheet - Page 26

• Manufacturer Part Number: S29AS008J70BFI030
• Description: IC 8M FLASH MEMORY
• Manufacturer: Spansion Inc.

Specifications of S29AS008J70BFI030

• Cell Type: NOR
• Density: 8Mb
• Access Time (max): 70ns
• Interface Type: Parallel
• Boot Type: Bottom/Top
• Address Bus: 20/19Bit
• Operating Supply Voltage (typ): 1.8V
• Operating Temp Range: -40C to 85C
• Package Type: FBGA
• Program/erase Volt (typ): 1.65 to 1.95V
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 1.65V
• Operating Supply Voltage (max): 1.95V
• Word Size: 8/16Bit
• Number Of Words: 1M/512K
• Supply Current: 12mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Compliant

26
(Word Mode)
Addresses
2Ah
2Bh
2Ch
2Dh
2Eh
3Ah
3Bh
3Ch
27h
28h
29h
2Fh
30h
31h
32h
33h
34h
35h
36h
37h
38h
39h
(Byte Mode)
Addresses
4Eh
5Ah
5Ch
5Eh
6Ah
6Ch
6Eh
50h
52h
54h
56h
58h
60h
62h
64h
66h
68h
70h
72h
74h
76h
78h
Table 9.3 Device Geometry Definition
0014h
0002h
0000h
0000h
0000h
0002h
0007h
0000h
0020h
0000h
000Eh
0000h
0000h
0001h
0000h
0000h
0000h
0000h
0000h
0000h
0000h
0000h
Data
S29AS008J
D a t a
Device Size = 2
Flash Device Interface description (refer to CFI publication 100)
Max. number of byte in multi-byte write = 2
(00h = not supported)
Number of Erase Block Regions within device
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
Erase Block Region 2 Information
Erase Block Region 3 Information
Erase Block Region 4 Information
S h e e t
N
byte
Description
S29AS008J_00_08 July 16, 2009
N