PIC18LF14K50T-I/SO Microchip Technology, PIC18LF14K50T-I/SO Datasheet - Page 132
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PIC18LF14K50T-I/SO
Manufacturer Part Number
PIC18LF14K50T-I/SO
Description
16 KB Flash, 768 RAM, 15 I/O, 10-Bit ADC, USB 2.0, NanoWatt XLP 20 SOIC .300in T
Manufacturer
Microchip Technology
Series
PIC® XLP™ 18Fr
Datasheets
1.PIC18F13K50-ISS.pdf
(420 pages)
2.PIC18F13K50-ISS.pdf
(40 pages)
3.PIC18F13K50-ISS.pdf
(10 pages)
4.PIC18F13K50-ISS.pdf
(2 pages)
Specifications of PIC18LF14K50T-I/SO
Core Processor
PIC
Core Size
8-Bit
Speed
48MHz
Connectivity
I²C, SPI, UART/USART, USB
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
14
Program Memory Size
16KB (8K x 16)
Program Memory Type
FLASH
Eeprom Size
256 x 8
Ram Size
768 x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 3.6 V
Data Converters
A/D 11x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
20-SOIC (7.5mm Width)
Processor Series
PIC18LF
Core
PIC
Data Bus Width
8 bit
Data Ram Size
256 B
Interface Type
EUSART, I2C, MSSP, SPI, USB
Maximum Clock Frequency
32 KHz
Number Of Programmable I/os
18
Number Of Timers
4
Operating Supply Voltage
1.8 V to 3.6 V
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
3rd Party Development Tools
52715-96, 52716-328, 52717-734, 52712-325, EWPIC18
Development Tools By Supplier
PG164130, DV164035, DV244005, DV164005, DM164127, DV164126
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 12 Channel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
PIC18LF14K50T-I/SO
Manufacturer:
MICROCHIP
Quantity:
12 000
- PIC18F13K50-ISS PDF datasheet
- PIC18F13K50-ISS PDF datasheet #2
- PIC18F13K50-ISS PDF datasheet #3
- PIC18F13K50-ISS PDF datasheet #4
- Current page: 132 of 420
- Download datasheet (4Mb)
PIC18F/LF1XK50
14.4.6
In Half-Bridge applications where all power switches
are modulated at the PWM frequency, the power
switches normally require more time to turn off than to
turn on. If both the upper and lower power switches are
switched at the same time (one turned on, and the
other turned off), both switches may be on for a short
period of time until one switch completely turns off.
During this brief interval, a very high current
(shoot-through current) will flow through both power
switches, shorting the bridge supply. To avoid this
potentially destructive shoot-through current from
flowing during switching, turning on either of the power
switches is normally delayed to allow the other switch
to completely turn off.
In Half-Bridge mode, a digitally programmable
dead-band delay is available to avoid shoot-through
current from destroying the bridge power switches. The
delay occurs at the signal transition from the non-active
state to the active state. See
illustration. The lower seven bits of the associated
PWM1CON register
period in terms of microcontroller instruction cycles
(T
FIGURE 14-15:
DS41350E-page 132
CY
Standard Half-Bridge Circuit (“Push-Pull”)
or 4 T
OSC
PROGRAMMABLE DEAD-BAND
DELAY MODE
).
(Register
EXAMPLE OF HALF-BRIDGE APPLICATIONS
14-3) sets the delay
Figure 14-14
P1A
P1B
Preliminary
for
FET
Driver
FET
Driver
FIGURE 14-14:
P1A
P1B
td = Dead-Band Delay
Note 1: At this time, the TMR2 register is equal to the
(2)
(2)
V+
V-
(1)
2: Output signals are shown as active-high.
td
Pulse Width
PR2 register.
Load
Period
td
EXAMPLE OF
HALF-BRIDGE PWM
OUTPUT
2010 Microchip Technology Inc.
+
V
-
+
V
-
(1)
Period
(1)
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