BCX5310E6327XT Infineon Technologies, BCX5310E6327XT Datasheet - Page 3

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BCX5310E6327XT

Manufacturer Part Number
BCX5310E6327XT
Description
Trans GP BJT PNP 80V 1A 4-Pin (3+Tab) SOT-89 T/R
Manufacturer
Infineon Technologies
Type
PNPr
Datasheet

Specifications of BCX5310E6327XT

Package
4SOT-89
Supplier Package
SOT-89
Pin Count
4
Minimum Dc Current Gain
25@5mA@2V|63@150mA@2V|25@500mA@2V
Maximum Operating Frequency
125(Typ) MHz
Maximum Dc Collector Current
1 A
Maximum Collector Emitter Saturation Voltage
0.5@50mA@500mA V
Maximum Collector Base Voltage
100 V
Maximum Collector Emitter Voltage
80 V
Maximum Emitter Base Voltage
5 V
Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
I
I
Collector-base breakdown voltage
I
I
I
Emitter-base breakdown voltage
I
Collector-base cutoff current
V
V
DC current gain
I
I
I
I
I
Collector-emitter saturation voltage
I
Base-emitter voltage
I
AC Characteristics
Transition frequency
I
1
C
C
C
C
C
C
E
C
C
C
C
C
C
C
C
Pulse test: t < 300µs; D < 2%
CB
CB
= 10 µA, I
= 10 mA, I
= 10 mA, I
= 10 mA, I
= 100 µA, I
= 100 µA, I
= 100 µA, I
= 5 mA, V
= 150 mA, V
= 150 mA, V
= 150 mA, V
= 500 mA, V
= 500 mA, I
= 500 mA, V
= 50 mA, V
= 30 V, I
= 30 V, I
C
CE
B
B
B
E
E
E
E
E
CE
= 0
B
= 0 , BCX51
= 0 , BCX52
= 0 , BCX53
= 0
= 0 , T
CE
CE
CE
CE
CE
= 0 , BCX51
= 0 , BCX52
= 0 , BCX53
1)
= 2 V
= 50 mA
= 10 V, f = 20 MHz
= 2 V, BCX51...BCX53
= 2 V, BCX53-10
= 2 V, BCX51-16...BCX53-16
= 2 V
= 2 V
1)
A
= 150 °C
A
= 25°C, unless otherwise specified
1)
3
f
Symbol
V
V
V
I
h
V
V
T
CBO
FE
(BR)CEO
(BR)CBO
(BR)EBO
CEsat
BE(ON)
min.
100
100
45
60
25
40
63
25
45
60
80
5
-
-
-
-
-
Values
BCX51...-BCX53...
100
160
typ.
125
-
-
-
-
-
-
-
-
-
-
-
-
-
-
max.
250
160
250
0.1
0.5
20
1
2008-10-10
-
-
-
-
-
-
-
-
-
-
MHz
Unit
V
µA
-
V

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