SI3202-G-FSR Silicon Laboratories Inc, SI3202-G-FSR Datasheet - Page 44

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SI3202-G-FSR

Manufacturer Part Number
SI3202-G-FSR
Description
Manufacturer
Silicon Laboratories Inc
Datasheet

Specifications of SI3202-G-FSR

Lead Free Status / RoHS Status
Compliant
Si3220/25 Si3200/02
When generating a high-voltage ringing amplitude using
the Si3220, the power dissipated during the OHT state
typically increases due to operating from the ringing
battery supply in this mode. To reduce power, the
chipset provides the ability to accommodate up to three
separate battery supplies by implementing a secondary
battery
components as illustrated in Figure 20.
The Si3220’s BATSEL pin is used to switch between the
V
44
BHI
(typically –48 V) and V
switch
using
V
Figure 20. 3-Battery Switching with Si3220/Si3200/Si3202
V
Component
BRING
V
BHI
BLO
a
R101
R102
R103
D1
Q1
Q2
Table 24. Three-Battery Switching Components
BLO
few
(typically –24 V) rails
low-cost
0.1 µF
0.1 µF
VBATH
VBAT
VBATL
402 k Ω ,1/10 W,± 1%
10 k Ω ,1/10 W, ± 5%
Si3200/2
200 V, 200 mA
806 kΩ
1/10 W, ± 5%
external
100 V PNP
100 V NPN
Value
BATSEL
Rev. 1.3
using the switch internal to the Si3200/2. The Si3220’s
GPO pin is used along with the external transistor circuit
to switch the V
onto the Si3200/2’s V
The GPO signal is driven automatically by the ringing
cadence provided that the RRAIL bit of the RLYCON
register is set to 1 (signifying that a third battery rail is
present).
SVBAT
IN4003
40.2 kΩ
D1
R9
2.4 k Ω for V
3.9 k Ω for V
1N4003 or similar
Si3220
BRING
R102
CXT5401 or
CXT5551 or
Comments
Q2
CXT5551
Q1
similar
similar
rail (the ringing voltage battery rail)
BAT
10 kΩ
R101
DD
CXT5401
DD
=3.3 V
pin when ringing is enabled.
R103
402 kΩ
=5 V

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