IRFH8318TR2PBF International Rectifier, IRFH8318TR2PBF Datasheet - Page 4

• Manufacturer Part Number: IRFH8318TR2PBF
• Description: MOSFET N-CH 30V 21A 5X6 PQFN
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFH8318TR2PBF

• Input Capacitance (ciss) @ Vds: 3180pF @ 10V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.1 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 27A
• Vgs(th) (max) @ Id: 2.35V @ 50µA
• Gate Charge (qg) @ Vgs: 41nC @ 10V
• Power - Max: 3.6W
• Mounting Type: *
• Package / Case: *
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 27A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 3.1mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1.8V
• Rohs Compliant: Yes
• Power Dissipation Pd: 3.6W
• Resistance Drain-source Rds (on): 4.6 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 120 A
• Power Dissipation: 59 W
• Gate Charge Qg: 41 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRFH8318TR2PBFTR

Fig 7. Typical Source-Drain Diode Forward Voltage
4
1000
100
1.0
120
100
10
80
60
40
20
Fig 9. Maximum Drain Current vs.
0.001
0
0.01
0.2
0.1
10
25
1
Case (Bottom) Temperature
1E-006
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
0.4
V SD , Source-to-Drain Voltage (V)
D = 0.50
50
T C , Case Temperature (°C)
T J = 150°C
0.20
0.10
0.02
0.01
0.05
0.6
SINGLE PULSE
( THERMAL RESPONSE )
75
Limited By Source
Bonding Technology
0.8
1E-005
T J = 25°C
100
1.0
V GS = 0V
125
1.2
t 1 , Rectangular Pulse Duration (sec)
150
1.4
0.0001
0.001
Fig 8. Maximum Safe Operating Area
10000
1000
Fig 10. Threshold Voltage vs. Temperature
100
0.1
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
10
1
0.1
-75 -50 -25
Tc = 25°C
Tj = 150°C
Single Pulse
Limited By Source
Bonding Technology
I D = 50μA
I D = 250μA
I D = 1.0mA
I D = 1.0A
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
V DS , Drain-to-Source Voltage (V)
T J , Temperature ( °C )
0.01
OPERATION IN THIS AREA
LIMITED BY R DS (on)
1
0
1msec
25
50
10msec
100μsec
DC
10
75 100 125 150
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0.1
100