IRFH8318TR2PBF International Rectifier, IRFH8318TR2PBF Datasheet - Page 3

• Manufacturer Part Number: IRFH8318TR2PBF
• Description: MOSFET N-CH 30V 21A 5X6 PQFN
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFH8318TR2PBF

• Input Capacitance (ciss) @ Vds: 3180pF @ 10V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.1 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 27A
• Vgs(th) (max) @ Id: 2.35V @ 50µA
• Gate Charge (qg) @ Vgs: 41nC @ 10V
• Power - Max: 3.6W
• Mounting Type: *
• Package / Case: *
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 27A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 3.1mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1.8V
• Rohs Compliant: Yes
• Power Dissipation Pd: 3.6W
• Resistance Drain-source Rds (on): 4.6 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 120 A
• Power Dissipation: 59 W
• Gate Charge Qg: 41 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRFH8318TR2PBFTR

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Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
100000
10000
1000
1000
1000
100
100
100
0.1
0.1
10
10
10
Fig 3. Typical Transfer Characteristics
1
1
Fig 1. Typical Output Characteristics
0.1
1
1
T J = 150°C
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
2
1
T J = 25°C
2.5V
3
C iss
C rss
C oss
f = 1 MHZ
V DS = 15V
≤60μs PULSE WIDTH
≤ 60μs
Tj = 25°C
10
4
PULSE WIDTH
10
TOP
BOTTOM
5
VGS
10V
7.00V
5.00V
4.50V
3.50V
3.00V
2.75V
2.50V
100
100
6
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
1000
Fig 4. Normalized On-Resistance vs. Temperature
100
10
1.8
1.6
1.4
1.2
1.0
0.8
0.6
14
12
10
1
8
6
4
2
0
0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160
0
Fig 2. Typical Output Characteristics
I D = 20A
I D = 20A
V GS = 10V
V DS , Drain-to-Source Voltage (V)
10
T J , Junction Temperature (°C)
Q G Total Gate Charge (nC)
V DS = 24V
V DS = 15V
V DS = 6.0V
20
1
2.5V
≤ 60μs
Tj = 150°C
30
PULSE WIDTH
10
40
TOP
BOTTOM
50
VGS
10V
7.00V
5.00V
4.50V
3.50V
3.00V
2.75V
2.50V
100
60
3