BBY 61-02LS E6327 Infineon Technologies, BBY 61-02LS E6327 Datasheet - Page 118

• Manufacturer Part Number: BBY 61-02LS E6327
• Description: DIODE RF TUNING 10V 20MA TSSLP-2
• Manufacturer: Infineon Technologies

Specifications of BBY 61-02LS E6327

• Capacitance Ratio: 2.45
• Voltage - Peak Reverse (max): 10V
• Diode Type: Single
• Mounting Type: Surface Mount
• Package / Case: TSSLP-2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Capacitance Ratio Condition: -
• Q @ Vr, F: -
• Other names: BBY61-02LSE6327INTR; BBY6102LSE6327T; SP000200324

Silicon Discrete Components
Type
AF Transistors
NPN High Voltage Transistors (8 mm Tape)
BFN 24
BFN 26
BFN 26
SMBTA 42
MMBTA 42
SMBTA 42
PNP High Voltage Transistors (8 mm Tape)
BFN 27
SMBTA 92
MMBTA 92
SMBTA 92
PZTA 92
PZTA 92
NPN High Voltage Transistors (12 mm Tape)
BFN 18
BFN 38
PZTA 42
PNP High Voltage Transistors (12 mm Tape)
BFN 19
BFN 39
* Order unit
Infineon Technologies
SMD = Surface Mounted Device
10k* SP000014786
10k* SP000011001
10k* SP000011005
3k* SP000014784
3k* SP000014785
3k* SP000011000
3k* SP000010999
3k* SP000014782
3k* SP000011004
3k* SP000011002
1k* SP000011008
4k* SP000011009
1k* SP000010997
1k* SP000011006
1k* SP000014780
1k* SP000010998
1k* SP000014781
Ordering Code
Package
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT223
SOT223
SOT89
SOT223
SOT223
SOT89
SOT223
V
V
250
300
300
300
300
300
300
300
300
300
300
300
300
300
300
300
300
CEO
Maximum Ratings
I
mA
500
500
500
500
500
500
500
500
500
500
500
500
500
500
500
500
500
CM
f
MHz
70
70
70
70
70
70
100
100
100
100
100
100
70
70
70
100
100
T
h
Characteristics
FE
40
30
30
40
40
40
30
25
25
25
25
25
30
30
40
30
30
(
T
A
= 25°C)
at
I
mA
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
C
V
118
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
CE
V
4