BB 814 E6433 GR1 Infineon Technologies, BB 814 E6433 GR1 Datasheet - Page 2

• Manufacturer Part Number: BB 814 E6433 GR1
• Description: DIODE VAR CAP 18V 50MA SOT-23
• Manufacturer: Infineon Technologies

Specifications of BB 814 E6433 GR1

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Capacitance @ Vr, F: 22.7pF @ 8V, 1MHz
• Capacitance Ratio: 2.25
• Capacitance Ratio Condition: C2/C8
• Voltage - Peak Reverse (max): 18V
• Diode Type: 1 Pair Common Cathode
• Q @ Vr, F: 200 @ 2V, 100 MHz
• Mounting Type: Surface Mount
• Capacitance: 43 pF
• Reverse Voltage: 20 V
• Configuration: Dual Common Cathode
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 55 C
• Minimum Tuning Ratio: 2.05
• Mounting Style: SMD/SMT
• Tuning Ratio Test Condition: 2 / 8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BB814E6433GR1XT; SP000051040

1
C
C
C
C
C
2
Diode capacitance
V
V
Capacitance matching
V
Electrical Characteristics at T
Parameter
DC Characteristics
Reverse current
V
V
AC Characteristics
Capacitance ratio
V
Series resistance
V
Q factor
f = 100 MHz, V
Capacitance groups at 2V and 8V, coded 1; 2
For details please refer to Application Note 047.
T
2V
2V
8V
8V
R
R
R
R
R
R
R
/groups
= 2 V, f = 1 MHz
= 8 V, f = 1 MHz
= 2 V, V
= 16 V
= 16 V, T
= 2 V, V
= 2 V, f = 100 MHz
min
max
min
max
R
R
A
= 8 V, f = 1 MHz
= 8 V, f = 1 MHz
19.1pF
21.95pF 22.7pF
1
43pF
45pF
= 60 °C
R
= 2 V
1)
2)
19.75pF
2
44.5pF
46.5pF
A
= 25°C, unless otherwise specified
2
Symbol
I
C
C
r
Q
R
S
C
T
T2
T
/ C
/ C
T8
T
min.
19.1
2.05
43
-
-
-
-
-
Values
44.75
20.8
0.18
typ.
2.15
200
-
-
-
max.
200
46.5
22.7
2.25
2007-04-20
20
3
BB814...
-
-
pF
Unit
nA
%